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Junction Engineering in Nanostructured Optoelectronic Devices

Nowzari, Ali LU (2018)
Abstract
Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.

In this work we have fabricated vertical arrays of InP nanowire p-n junctions to... (More)
Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.

In this work we have fabricated vertical arrays of InP nanowire p-n junctions to quantitatively evaluate the p-doping in nanowires using the capacitance-voltage method, fabricated and characterized vertical arrays of nanowire photovoltaic devices, and photodetectors in InP material system, as well as fabricating and characterizing nanostructured GaN-based light emitting diodes. We have developed a novel characterization method by engineering the p-i-n junctions in InP core-shell nanowires which enabled us to perform a reasonable comparative study of absorption between vertically and laterally oriented nanowire photovoltaic devices, studied the effect of junction position on the performance of InP axial p-i-n photodetectors/solar cells, and realized nanostructured (Al)(In)GaN UV, blue, green and red light emitting diodes enabled by junction placement on the c crystal plane. (Less)
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author
supervisor
opponent
  • Professor Anand, Srinivasan, KTH, Stockholm
organization
publishing date
type
Thesis
publication status
published
subject
keywords
Nanowire, Solar cell, Photodetector, Light Emitting Diode, Doping Evaluation, Fysicumarkivet A:2018:Nowzari
pages
78 pages
publisher
Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden,
defense location
Rydbergsalen, Fysicum, Professorsgatan 1, Lund University, Faculty of Engineering LTH.
defense date
2018-10-15 13:15:00
ISBN
978-91-7753-848-6
language
English
LU publication?
yes
id
4acb8c01-2985-45b5-a295-72e9c366efd6
date added to LUP
2018-09-19 13:22:02
date last changed
2019-07-05 09:57:30
@phdthesis{4acb8c01-2985-45b5-a295-72e9c366efd6,
  abstract     = {Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.<br/><br/>In this work we have fabricated vertical arrays of InP nanowire p-n junctions to quantitatively evaluate the p-doping in nanowires using the capacitance-voltage method, fabricated and characterized vertical arrays of nanowire photovoltaic devices, and photodetectors in InP material system, as well as fabricating and characterizing nanostructured GaN-based light emitting diodes. We have developed a novel characterization method by engineering the p-i-n junctions in InP core-shell nanowires which enabled us to perform a reasonable comparative study of absorption between vertically and laterally oriented nanowire photovoltaic devices, studied the effect of junction position on the performance of InP axial p-i-n photodetectors/solar cells, and realized nanostructured (Al)(In)GaN UV, blue, green and red light emitting diodes enabled by junction placement on the c crystal plane.},
  author       = {Nowzari, Ali},
  isbn         = {978-91-7753-848-6},
  language     = {eng},
  month        = {09},
  publisher    = {Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden,},
  school       = {Lund University},
  title        = {Junction Engineering in Nanostructured Optoelectronic Devices},
  year         = {2018},
}