Processing and characterization of nanowire arrays for photodetectors
(2015) p.511-512- Abstract
We present a fabrication scheme of contacting arrays of vertically standing nanowires (NW) for LEDs (Duan et al. Nature 409:66–69, 2001), photodetectors (Wang et al. Science (NY) 293:1455–1457, 2001) or solar cell applications (Wallentin et al. Science (NY) 339:1057–1060, 2013). Samples were prepared by depositing Au films using nano-imprint lithography (Ma rtensson et al. Nano Lett 4:699–702, 2004) which are used as catalysts for NW growth in a low-pressure metal organic vapour phase epitaxy system where III-V precursors and dopant gases are flown at elevated temperatures which lead to the formation of NWs with different segments (Borgstrom et al. Nano Res 3:264–270, 2010). An insulating SiO2 layer is then deposited and etched from the... (More)
We present a fabrication scheme of contacting arrays of vertically standing nanowires (NW) for LEDs (Duan et al. Nature 409:66–69, 2001), photodetectors (Wang et al. Science (NY) 293:1455–1457, 2001) or solar cell applications (Wallentin et al. Science (NY) 339:1057–1060, 2013). Samples were prepared by depositing Au films using nano-imprint lithography (Ma rtensson et al. Nano Lett 4:699–702, 2004) which are used as catalysts for NW growth in a low-pressure metal organic vapour phase epitaxy system where III-V precursors and dopant gases are flown at elevated temperatures which lead to the formation of NWs with different segments (Borgstrom et al. Nano Res 3:264–270, 2010). An insulating SiO2 layer is then deposited and etched from the top segments of the NWs followed by sputtering of a transparent top conducting oxide and opening up 1 1mm2 device areas through a UV lithography step and etching of the top contact from non-device areas. A second UV lithography step was subsequently carried out to open up smaller windows on the ITO squares for bond pad definition, followed by metallization and lift-off; and the substrate is used as back contact. We also report on the electrical and optical properties of near-infrared p+-i-n+photodetectors/solar cells based on square millimeter ensembles of InP nanowires grown on InP substrates. The study includes a sample series where the p+-segment length was varied between 0 and 250 nm, as well as solar cell samples with 9.3% efficiency with similar design. The NWs have a complex modulated crystal structure of alternating wurtzite and zincblende segments, a polytypism that depends on dopant type. The electrical data for all samples display excellent rectifying behavior with an ideality factor of about 2 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p+- segment length.Without p+-segment in the NWs, photogenerated carriers funneled from the substrate into the NWs contribute significantly to the photocurrent. Adding a pC-segment shifts the depletion region up into the i -region of the NWs reducing the substrate contribution to photocurrent while strongly improving the collections of carriers generated in the NWs, in agreement with theoretical modeling (Fig. 48.1).
(Less)
- author
- Jain, Vishal
LU
; Wallentin, J.
LU
; Nowzari, A.
LU
; Heurlin, M.
LU
; Asoli, D.
; Borgström, M. T.
LU
; Capasso, F. ; Samuelson, L. LU and Pettersson, H. LU
- organization
- publishing date
- 2015-01-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Infrared (IR), Nanophotonics, Nanowires, Photodetectors, Solar cells
- host publication
- Nano-Structures for Optics and Photonics : Optical Strategies for Enhancing Sensing, Imaging, Communication and Energy Conversion - Optical Strategies for Enhancing Sensing, Imaging, Communication and Energy Conversion
- pages
- 2 pages
- publisher
- Springer
- external identifiers
-
- scopus:84943254945
- ISBN
- 9789401791335
- 9789401791328
- DOI
- 10.1007/978-94-017-9133-5_48
- language
- English
- LU publication?
- yes
- id
- 4dc23ce2-6e2a-47d3-8a9f-c6aea2a1629f
- date added to LUP
- 2017-12-13 16:31:20
- date last changed
- 2025-01-08 03:26:53
@inbook{4dc23ce2-6e2a-47d3-8a9f-c6aea2a1629f, abstract = {{<p>We present a fabrication scheme of contacting arrays of vertically standing nanowires (NW) for LEDs (Duan et al. Nature 409:66–69, 2001), photodetectors (Wang et al. Science (NY) 293:1455–1457, 2001) or solar cell applications (Wallentin et al. Science (NY) 339:1057–1060, 2013). Samples were prepared by depositing Au films using nano-imprint lithography (Ma rtensson et al. Nano Lett 4:699–702, 2004) which are used as catalysts for NW growth in a low-pressure metal organic vapour phase epitaxy system where III-V precursors and dopant gases are flown at elevated temperatures which lead to the formation of NWs with different segments (Borgstrom et al. Nano Res 3:264–270, 2010). An insulating SiO2 layer is then deposited and etched from the top segments of the NWs followed by sputtering of a transparent top conducting oxide and opening up 1 1mm2 device areas through a UV lithography step and etching of the top contact from non-device areas. A second UV lithography step was subsequently carried out to open up smaller windows on the ITO squares for bond pad definition, followed by metallization and lift-off; and the substrate is used as back contact. We also report on the electrical and optical properties of near-infrared p<sup>+</sup>-i-n<sup>+</sup>photodetectors/solar cells based on square millimeter ensembles of InP nanowires grown on InP substrates. The study includes a sample series where the p<sup>+</sup>-segment length was varied between 0 and 250 nm, as well as solar cell samples with 9.3% efficiency with similar design. The NWs have a complex modulated crystal structure of alternating wurtzite and zincblende segments, a polytypism that depends on dopant type. The electrical data for all samples display excellent rectifying behavior with an ideality factor of about 2 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p<sup>+</sup>- segment length.Without p<sup>+</sup>-segment in the NWs, photogenerated carriers funneled from the substrate into the NWs contribute significantly to the photocurrent. Adding a pC-segment shifts the depletion region up into the i -region of the NWs reducing the substrate contribution to photocurrent while strongly improving the collections of carriers generated in the NWs, in agreement with theoretical modeling (Fig. 48.1).</p>}}, author = {{Jain, Vishal and Wallentin, J. and Nowzari, A. and Heurlin, M. and Asoli, D. and Borgström, M. T. and Capasso, F. and Samuelson, L. and Pettersson, H.}}, booktitle = {{Nano-Structures for Optics and Photonics : Optical Strategies for Enhancing Sensing, Imaging, Communication and Energy Conversion}}, isbn = {{9789401791335}}, keywords = {{Infrared (IR); Nanophotonics; Nanowires; Photodetectors; Solar cells}}, language = {{eng}}, month = {{01}}, pages = {{511--512}}, publisher = {{Springer}}, title = {{Processing and characterization of nanowire arrays for photodetectors}}, url = {{http://dx.doi.org/10.1007/978-94-017-9133-5_48}}, doi = {{10.1007/978-94-017-9133-5_48}}, year = {{2015}}, }