High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
Lehmann, Sebastian LU ; Jacobsson, Daniel LU ; Deppert, Knut LU
and Dick Thelander, Kimberly
LU
(2012)
In Nano Reseach
5(7).
p.470-476
- Abstract
- We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the... (More)
- We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3079687
- author
- Lehmann, Sebastian
LU
; Jacobsson, Daniel
LU
; Deppert, Knut
LU
and Dick Thelander, Kimberly
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, GaAs, heterostructure, polytypism, metal-organic vapor phase, epitaxy (MOVPE)-growth
- in
- Nano Reseach
- volume
- 5
- issue
- 7
- pages
- 470 - 476
- publisher
- Springer
- external identifiers
-
- wos:000306593900004
- scopus:84864119019
- ISSN
- 1998-0124
- DOI
- 10.1007/s12274-012-0232-3
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 4f3c8c89-b54e-4ee0-81ac-257484f44eb1 (old id 3079687)
- date added to LUP
- 2016-04-01 10:47:18
- date last changed
- 2023-11-10 05:25:58
@article{4f3c8c89-b54e-4ee0-81ac-257484f44eb1,
abstract = {{We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.}},
author = {{Lehmann, Sebastian and Jacobsson, Daniel and Deppert, Knut and Dick Thelander, Kimberly}},
issn = {{1998-0124}},
keywords = {{Nanowires; GaAs; heterostructure; polytypism; metal-organic vapor phase; epitaxy (MOVPE)-growth}},
language = {{eng}},
number = {{7}},
pages = {{470--476}},
publisher = {{Springer}},
series = {{Nano Reseach}},
title = {{High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires}},
url = {{http://dx.doi.org/10.1007/s12274-012-0232-3}},
doi = {{10.1007/s12274-012-0232-3}},
volume = {{5}},
year = {{2012}},
}