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Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy

Leshchenko, E. D. LU ; Kuyanov, P. ; La Pierre, R. R. and Dubrovskii, V. G. (2018) 2018 International Conference Laser Optics, ICLO 2018 p.381-381
Abstract

The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots.

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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Proceedings - International Conference Laser Optics 2018, ICLO 2018
article number
8435415
pages
1 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2018 International Conference Laser Optics, ICLO 2018
conference location
St. Petersburg, Russian Federation
conference dates
2018-06-04 - 2018-06-08
external identifiers
  • scopus:85052537264
ISBN
9781538636121
DOI
10.1109/LO.2018.8435415
language
English
LU publication?
yes
id
50f7e77d-9b6b-4760-8682-64872898df78
date added to LUP
2022-04-01 15:40:55
date last changed
2025-10-14 12:18:34
@inproceedings{50f7e77d-9b6b-4760-8682-64872898df78,
  abstract     = {{<p>The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots.</p>}},
  author       = {{Leshchenko, E. D. and Kuyanov, P. and La Pierre, R. R. and Dubrovskii, V. G.}},
  booktitle    = {{Proceedings - International Conference Laser Optics 2018, ICLO 2018}},
  isbn         = {{9781538636121}},
  language     = {{eng}},
  pages        = {{381--381}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy}},
  url          = {{http://dx.doi.org/10.1109/LO.2018.8435415}},
  doi          = {{10.1109/LO.2018.8435415}},
  year         = {{2018}},
}