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A Class-D CMOS DCO with an on-chip LDO

Fanori, Luca LU ; Mattsson, Thomas and Andreani, Pietro LU (2014) European Solid State Circuits Conference (ESSCIRC), 2014 In Proceedings Of The 40th European Solid-State Circuit Conference (ESSCIRC 2014) p.335-338
Abstract
This paper presents the co-design of a class-D digitally-controlled oscillator (DCO) and a low-dropout voltage regulator (LDO) generating the supply voltage for the DCO. Despite the high intrinsic supply pushing of the class-D oscillator topology, the LDO noise has only a very marginal impact on the DCO phase noise. The class-D DCO and LDO have been integrated in a 65nm CMOS process without any thick top metal layer. The oscillation frequency is tunable between 3.0 GHz and 4.3 GHz, for a tuning range of 36%, with a fine frequency step below 3 kHz and a fine frequency range of 10MHz (both measured at 3 GHz). Drawing 9.0mA from 0.4V (corresponding to an unregulated supply voltage of 0.6 V), the phase noise is -145.5 dBc/Hz at a 10MHz offset... (More)
This paper presents the co-design of a class-D digitally-controlled oscillator (DCO) and a low-dropout voltage regulator (LDO) generating the supply voltage for the DCO. Despite the high intrinsic supply pushing of the class-D oscillator topology, the LDO noise has only a very marginal impact on the DCO phase noise. The class-D DCO and LDO have been integrated in a 65nm CMOS process without any thick top metal layer. The oscillation frequency is tunable between 3.0 GHz and 4.3 GHz, for a tuning range of 36%, with a fine frequency step below 3 kHz and a fine frequency range of 10MHz (both measured at 3 GHz). Drawing 9.0mA from 0.4V (corresponding to an unregulated supply voltage of 0.6 V), the phase noise is -145.5 dBc/Hz at a 10MHz offset from a 3.0 GHz carrier. The resulting FoM is 189.5 dBc/Hz, and varies less than 1 dB across the tuning range. The FoM increases to above 190 dBc/Hz when the regulated supply voltage is 0.5V. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
VCO, DCO, class-D, low phase noise, high efficiency, CMOS, low-voltage, LDO, voltage regulator
in
Proceedings Of The 40th European Solid-State Circuit Conference (ESSCIRC 2014)
pages
335 - 338
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
European Solid State Circuits Conference (ESSCIRC), 2014
external identifiers
  • wos:000349461900077
  • scopus:84909983186
ISSN
1930-8833
DOI
10.1109/ESSCIRC.2014.6942090
language
English
LU publication?
yes
id
29555469-eabb-4c82-ac77-d4f337daad91 (old id 5185977)
date added to LUP
2015-03-30 15:40:07
date last changed
2017-09-10 04:02:02
@inproceedings{29555469-eabb-4c82-ac77-d4f337daad91,
  abstract     = {This paper presents the co-design of a class-D digitally-controlled oscillator (DCO) and a low-dropout voltage regulator (LDO) generating the supply voltage for the DCO. Despite the high intrinsic supply pushing of the class-D oscillator topology, the LDO noise has only a very marginal impact on the DCO phase noise. The class-D DCO and LDO have been integrated in a 65nm CMOS process without any thick top metal layer. The oscillation frequency is tunable between 3.0 GHz and 4.3 GHz, for a tuning range of 36%, with a fine frequency step below 3 kHz and a fine frequency range of 10MHz (both measured at 3 GHz). Drawing 9.0mA from 0.4V (corresponding to an unregulated supply voltage of 0.6 V), the phase noise is -145.5 dBc/Hz at a 10MHz offset from a 3.0 GHz carrier. The resulting FoM is 189.5 dBc/Hz, and varies less than 1 dB across the tuning range. The FoM increases to above 190 dBc/Hz when the regulated supply voltage is 0.5V.},
  author       = {Fanori, Luca and Mattsson, Thomas and Andreani, Pietro},
  booktitle    = {Proceedings Of The 40th European Solid-State Circuit Conference (ESSCIRC 2014)},
  issn         = {1930-8833},
  keyword      = {VCO,DCO,class-D,low phase noise,high efficiency,CMOS,low-voltage,LDO,voltage regulator},
  language     = {eng},
  pages        = {335--338},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A Class-D CMOS DCO with an on-chip LDO},
  url          = {http://dx.doi.org/10.1109/ESSCIRC.2014.6942090},
  year         = {2014},
}