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k dependence of the spin polarization in Mn5Ge3/Ge(111) thin films

Ndiaye, W.; Mariot, J. -M.; De Padova, P.; Richter, M. C.; Wang, W.; Heckmann, O.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F. and Cacho, C., et al. (2015) In Physical Review B (Condensed Matter and Materials Physics) 91(12).
Abstract
Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations.... (More)
Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed. (Less)
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Physical Review B (Condensed Matter and Materials Physics)
volume
91
issue
12
publisher
American Physical Society
external identifiers
  • wos:000350960100002
  • scopus:84927154682
ISSN
1098-0121
DOI
10.1103/PhysRevB.91.125118
language
English
LU publication?
yes
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78d59edc-f8a8-47f0-befd-f45e099f801a (old id 5294052)
date added to LUP
2015-04-27 08:51:56
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2017-01-01 06:12:29
@article{78d59edc-f8a8-47f0-befd-f45e099f801a,
  abstract     = {Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed.},
  articleno    = {125118},
  author       = {Ndiaye, W. and Mariot, J. -M. and De Padova, P. and Richter, M. C. and Wang, W. and Heckmann, O. and Taleb-Ibrahimi, A. and Le Fevre, P. and Bertran, F. and Cacho, C. and Leandersson, Mats and Thiagarajan, Balasubramanian and Stroppa, A. and Picozzi, S. and Hricovini, K.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {k dependence of the spin polarization in Mn5Ge3/Ge(111) thin films},
  url          = {http://dx.doi.org/10.1103/PhysRevB.91.125118},
  volume       = {91},
  year         = {2015},
}