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Low temperature deposition of silicon nitride using Si3Cl8

Riedel, Stefan; Sundqvist, Jonas LU and Gumprecht, Thomas (2015) In Thin Solid Films 577. p.114-118
Abstract
We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis... (More)
We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping. (C) 2015 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Silicon nitride, Atomic layer deposition, MOS capacitor
in
Thin Solid Films
volume
577
pages
114 - 118
publisher
Elsevier
external identifiers
  • wos:000350907200019
  • scopus:84926153655
ISSN
0040-6090
DOI
10.1016/j.tsf.2015.01.045
language
English
LU publication?
yes
id
e2fefacb-0d45-4186-934a-fccb7bb6ebef (old id 5297231)
date added to LUP
2015-04-27 09:02:30
date last changed
2017-02-19 03:49:44
@article{e2fefacb-0d45-4186-934a-fccb7bb6ebef,
  abstract     = {We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping. (C) 2015 Elsevier B.V. All rights reserved.},
  author       = {Riedel, Stefan and Sundqvist, Jonas and Gumprecht, Thomas},
  issn         = {0040-6090},
  keyword      = {Silicon nitride,Atomic layer deposition,MOS capacitor},
  language     = {eng},
  pages        = {114--118},
  publisher    = {Elsevier},
  series       = {Thin Solid Films},
  title        = {Low temperature deposition of silicon nitride using Si3Cl8},
  url          = {http://dx.doi.org/10.1016/j.tsf.2015.01.045},
  volume       = {577},
  year         = {2015},
}