Low temperature deposition of silicon nitride using Si3Cl8
(2015) In Thin Solid Films 577. p.114-118- Abstract
- We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis... (More)
- We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping. (C) 2015 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5297231
- author
- Riedel, Stefan ; Sundqvist, Jonas LU and Gumprecht, Thomas
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Silicon nitride, Atomic layer deposition, MOS capacitor
- in
- Thin Solid Films
- volume
- 577
- pages
- 114 - 118
- publisher
- Elsevier
- external identifiers
-
- wos:000350907200019
- scopus:84926153655
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2015.01.045
- language
- English
- LU publication?
- yes
- id
- e2fefacb-0d45-4186-934a-fccb7bb6ebef (old id 5297231)
- date added to LUP
- 2016-04-01 13:33:22
- date last changed
- 2022-02-19 06:06:53
@article{e2fefacb-0d45-4186-934a-fccb7bb6ebef,
abstract = {{We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping. (C) 2015 Elsevier B.V. All rights reserved.}},
author = {{Riedel, Stefan and Sundqvist, Jonas and Gumprecht, Thomas}},
issn = {{0040-6090}},
keywords = {{Silicon nitride; Atomic layer deposition; MOS capacitor}},
language = {{eng}},
pages = {{114--118}},
publisher = {{Elsevier}},
series = {{Thin Solid Films}},
title = {{Low temperature deposition of silicon nitride using Si3Cl8}},
url = {{http://dx.doi.org/10.1016/j.tsf.2015.01.045}},
doi = {{10.1016/j.tsf.2015.01.045}},
volume = {{577}},
year = {{2015}},
}