Simultaneous growth mechanisms for Cu-seeded InP nanowires
Hillerich, Karla LU ; Dick Thelander, Kimberly LU ; Messing, Maria LU ; Deppert, Knut LU
and Johansson, Jonas
LU
(2012)
In Nano Reseach
5(5).
p.297-306
- Abstract
- We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles.... (More)
- We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2813046
- author
- Hillerich, Karla
LU
; Dick Thelander, Kimberly
LU
; Messing, Maria
LU
; Deppert, Knut
LU
and Johansson, Jonas
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, MOVPE, MOCVD, epitaxy, InP, Cu seed particle
- in
- Nano Reseach
- volume
- 5
- issue
- 5
- pages
- 297 - 306
- publisher
- Tsinghua University Press
- external identifiers
-
- wos:000304114100001
- scopus:84860912950
- ISSN
- 1998-0124
- DOI
- 10.1007/s12274-012-0210-9
- language
- English
- LU publication?
- yes
- id
- 52f89627-bc2a-4e87-9f44-b81b4d5a98e9 (old id 2813046)
- date added to LUP
- 2016-04-01 10:15:54
- date last changed
- 2025-10-14 09:20:39
@article{52f89627-bc2a-4e87-9f44-b81b4d5a98e9,
abstract = {{We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.}},
author = {{Hillerich, Karla and Dick Thelander, Kimberly and Messing, Maria and Deppert, Knut and Johansson, Jonas}},
issn = {{1998-0124}},
keywords = {{Nanowires; MOVPE; MOCVD; epitaxy; InP; Cu seed particle}},
language = {{eng}},
number = {{5}},
pages = {{297--306}},
publisher = {{Tsinghua University Press}},
series = {{Nano Reseach}},
title = {{Simultaneous growth mechanisms for Cu-seeded InP nanowires}},
url = {{http://dx.doi.org/10.1007/s12274-012-0210-9}},
doi = {{10.1007/s12274-012-0210-9}},
volume = {{5}},
year = {{2012}},
}