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InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Burke, Adam LU ; Carrad, D J; Gluschke, J G; Storm, Kristian LU ; Fahlvik Svensson, Sofia LU ; Linke, Heiner LU ; Samuelson, Lars LU and Micolich, A P (2015) In Nano Letters 15(5). p.2836-2843
Abstract
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a... (More)
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
15
issue
5
pages
2836 - 2843
publisher
The American Chemical Society
external identifiers
  • pmid:25879492
  • wos:000354906000011
  • scopus:84929207531
ISSN
1530-6992
DOI
10.1021/nl5043243
language
English
LU publication?
yes
id
75dc5fe3-3a6b-4a0d-be62-98dedee7a6b7 (old id 5341741)
date added to LUP
2015-04-30 10:52:03
date last changed
2017-11-19 03:20:17
@article{75dc5fe3-3a6b-4a0d-be62-98dedee7a6b7,
  abstract     = {We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.},
  author       = {Burke, Adam and Carrad, D J and Gluschke, J G and Storm, Kristian and Fahlvik Svensson, Sofia and Linke, Heiner and Samuelson, Lars and Micolich, A P},
  issn         = {1530-6992},
  language     = {eng},
  number       = {5},
  pages        = {2836--2843},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.},
  url          = {http://dx.doi.org/10.1021/nl5043243},
  volume       = {15},
  year         = {2015},
}