InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
Burke, Adam LU
; Carrad, D J
; Gluschke, J G
; Storm, Kristian
LU
; Fahlvik Svensson, Sofia
LU
; Linke, Heiner
LU
; Samuelson, Lars
LU
and Micolich, A P
(2015)
In Nano Letters
15(5).
p.2836-2843
- Abstract
- We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a... (More)
- We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5341741
- author
- Burke, Adam
LU
; Carrad, D J
; Gluschke, J G
; Storm, Kristian
LU
; Fahlvik Svensson, Sofia
LU
; Linke, Heiner
LU
; Samuelson, Lars
LU
and Micolich, A P
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 15
- issue
- 5
- pages
- 2836 - 2843
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:25879492
- wos:000354906000011
- scopus:84929207531
- pmid:25879492
- ISSN
- 1530-6992
- DOI
- 10.1021/nl5043243
- language
- English
- LU publication?
- yes
- id
- 75dc5fe3-3a6b-4a0d-be62-98dedee7a6b7 (old id 5341741)
- date added to LUP
- 2016-04-01 10:59:02
- date last changed
- 2023-10-12 18:49:51
@article{75dc5fe3-3a6b-4a0d-be62-98dedee7a6b7,
abstract = {{We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.}},
author = {{Burke, Adam and Carrad, D J and Gluschke, J G and Storm, Kristian and Fahlvik Svensson, Sofia and Linke, Heiner and Samuelson, Lars and Micolich, A P}},
issn = {{1530-6992}},
language = {{eng}},
number = {{5}},
pages = {{2836--2843}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.}},
url = {{http://dx.doi.org/10.1021/nl5043243}},
doi = {{10.1021/nl5043243}},
volume = {{15}},
year = {{2015}},
}