Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
(2015) In Physical Review B (Condensed Matter and Materials Physics) 91(16).- Abstract
- We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport... (More)
- We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g factors and a spin-orbit interaction. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5402832
- author
- Ganjipour, Bahram LU ; Leijnse, Martin LU ; Samuelson, Lars LU ; Xu, Hongqi LU and Thelander, Claes LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 91
- issue
- 16
- article number
- 161301
- publisher
- American Physical Society
- external identifiers
-
- wos:000352344800001
- scopus:84929178985
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.91.161301
- language
- English
- LU publication?
- yes
- id
- 53e2e3f2-dee9-4c32-8ab0-f8a422760e22 (old id 5402832)
- date added to LUP
- 2016-04-01 14:28:29
- date last changed
- 2023-11-13 07:59:26
@article{53e2e3f2-dee9-4c32-8ab0-f8a422760e22,
abstract = {{We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g factors and a spin-orbit interaction.}},
author = {{Ganjipour, Bahram and Leijnse, Martin and Samuelson, Lars and Xu, Hongqi and Thelander, Claes}},
issn = {{1098-0121}},
language = {{eng}},
number = {{16}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots}},
url = {{http://dx.doi.org/10.1103/PhysRevB.91.161301}},
doi = {{10.1103/PhysRevB.91.161301}},
volume = {{91}},
year = {{2015}},
}