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Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Ganjipour, Bahram LU ; Leijnse, Martin LU ; Samuelson, Lars LU ; Xu, Hongqi LU and Thelander, Claes LU (2015) In Physical Review B (Condensed Matter and Materials Physics) 91(16).
Abstract
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport... (More)
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g factors and a spin-orbit interaction. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
91
issue
16
publisher
American Physical Society
external identifiers
  • wos:000352344800001
  • scopus:84929178985
ISSN
1098-0121
DOI
10.1103/PhysRevB.91.161301
language
English
LU publication?
yes
id
53e2e3f2-dee9-4c32-8ab0-f8a422760e22 (old id 5402832)
date added to LUP
2015-05-19 13:58:01
date last changed
2017-09-24 04:08:48
@article{53e2e3f2-dee9-4c32-8ab0-f8a422760e22,
  abstract     = {We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g factors and a spin-orbit interaction.},
  articleno    = {161301},
  author       = {Ganjipour, Bahram and Leijnse, Martin and Samuelson, Lars and Xu, Hongqi and Thelander, Claes},
  issn         = {1098-0121},
  language     = {eng},
  number       = {16},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots},
  url          = {http://dx.doi.org/10.1103/PhysRevB.91.161301},
  volume       = {91},
  year         = {2015},
}