Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
Persson, Olof LU ; Webb, James LU ; Dick Thelander, Kimberly LU ; Thelander, Claes LU ; Mikkelsen, Anders LU and Timm, Rainer LU
(2015)
In Nano Letters
15(6).
p.3684-3691
- Abstract
- Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift... (More)
- Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5461465
- author
- Persson, Olof
LU
; Webb, James
LU
; Dick Thelander, Kimberly
LU
; Thelander, Claes
LU
; Mikkelsen, Anders
LU
and Timm, Rainer
LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 15
- issue
- 6
- pages
- 3684 - 3691
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:25927249
- wos:000356316900005
- scopus:84931275617
- pmid:25927249
- ISSN
- 1530-6992
- DOI
- 10.1021/acs.nanolett.5b00898
- language
- English
- LU publication?
- yes
- id
- 5059144f-edde-4e38-9fd2-877b04e470b7 (old id 5461465)
- date added to LUP
- 2016-04-01 10:08:29
- date last changed
- 2023-11-09 12:57:00
@article{5059144f-edde-4e38-9fd2-877b04e470b7,
abstract = {{Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device.}},
author = {{Persson, Olof and Webb, James and Dick Thelander, Kimberly and Thelander, Claes and Mikkelsen, Anders and Timm, Rainer}},
issn = {{1530-6992}},
language = {{eng}},
number = {{6}},
pages = {{3684--3691}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.}},
url = {{http://dx.doi.org/10.1021/acs.nanolett.5b00898}},
doi = {{10.1021/acs.nanolett.5b00898}},
volume = {{15}},
year = {{2015}},
}