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Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.

Persson, Olof LU ; Webb, James LU ; Dick Thelander, Kimberly LU ; Thelander, Claes LU ; Mikkelsen, Anders LU and Timm, Rainer LU (2015) In Nano Letters 15(6). p.3684-3691
Abstract
Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift... (More)
Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
15
issue
6
pages
3684 - 3691
publisher
The American Chemical Society
external identifiers
  • pmid:25927249
  • wos:000356316900005
  • scopus:84931275617
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b00898
language
English
LU publication?
yes
id
5059144f-edde-4e38-9fd2-877b04e470b7 (old id 5461465)
date added to LUP
2015-06-16 16:24:33
date last changed
2017-10-22 03:08:14
@article{5059144f-edde-4e38-9fd2-877b04e470b7,
  abstract     = {Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device.},
  author       = {Persson, Olof and Webb, James and Dick Thelander, Kimberly and Thelander, Claes and Mikkelsen, Anders and Timm, Rainer},
  issn         = {1530-6992},
  language     = {eng},
  number       = {6},
  pages        = {3684--3691},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b00898},
  volume       = {15},
  year         = {2015},
}