FIB method of sectioning of III–V core-multi-shell nanowires for analysis of core/sell interfaces by high resolution TEM
(2017) In Acta Physica Polonica A 131(5). p.1332-1335- Abstract
The core-multishell wurtzite structure (In,Ga)As–(Ga,Al)As–(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour–liquid–solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 ◦C, and 230 ◦C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared... (More)
The core-multishell wurtzite structure (In,Ga)As–(Ga,Al)As–(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour–liquid–solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 ◦C, and 230 ◦C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.
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- author
- Kret, S. ; Kaleta, A. ; Bilska, M. ; Kurowska, B. ; Siusys, A. ; Dąbrowski, J. and Sadowski, J. LU
- organization
- publishing date
- 2017
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Acta Physica Polonica A
- volume
- 131
- issue
- 5
- pages
- 4 pages
- publisher
- Institute of Physics, Polish Academy of Sciences
- external identifiers
-
- scopus:85072950551
- ISSN
- 0587-4246
- DOI
- 10.12693/APHYSPOLA.131.1332
- language
- English
- LU publication?
- yes
- id
- 56c83e2a-433f-4594-9742-fd5e5b56d42e
- date added to LUP
- 2022-04-01 11:03:48
- date last changed
- 2022-04-01 17:00:32
@article{56c83e2a-433f-4594-9742-fd5e5b56d42e,
abstract = {{<p>The core-multishell wurtzite structure (In,Ga)As–(Ga,Al)As–(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour–liquid–solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 <sup>◦</sup>C, and 230 <sup>◦</sup>C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.</p>}},
author = {{Kret, S. and Kaleta, A. and Bilska, M. and Kurowska, B. and Siusys, A. and Dąbrowski, J. and Sadowski, J.}},
issn = {{0587-4246}},
language = {{eng}},
number = {{5}},
pages = {{1332--1335}},
publisher = {{Institute of Physics, Polish Academy of Sciences}},
series = {{Acta Physica Polonica A}},
title = {{FIB method of sectioning of III–V core-multi-shell nanowires for analysis of core/sell interfaces by high resolution TEM}},
url = {{http://dx.doi.org/10.12693/APHYSPOLA.131.1332}},
doi = {{10.12693/APHYSPOLA.131.1332}},
volume = {{131}},
year = {{2017}},
}