Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires
(2011) In Physica Status Solidi. B: Basic Research 248(7). p.1587-1591- Abstract
- Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of... (More)
- Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2088465
- author
- Andrearczyk, Tomasz ; Wosinski, Tadeusz ; Figielski, Tadeusz ; Makosa, Andrzej ; Krogulec, Iwona ; Wrobel, Jerzy and Sadowski, Janusz LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- domain walls, ferromagnetic semiconductors, GaMnAs, magnetoresistance, nanostructures
- in
- Physica Status Solidi. B: Basic Research
- volume
- 248
- issue
- 7
- pages
- 1587 - 1591
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000293033000008
- scopus:79959590944
- ISSN
- 0370-1972
- DOI
- 10.1002/pssb.201001099
- language
- English
- LU publication?
- yes
- id
- 56f9b640-0217-4ba0-8965-f5db997c6739 (old id 2088465)
- date added to LUP
- 2016-04-01 12:56:09
- date last changed
- 2022-01-27 08:23:49
@article{56f9b640-0217-4ba0-8965-f5db997c6739,
abstract = {{Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
author = {{Andrearczyk, Tomasz and Wosinski, Tadeusz and Figielski, Tadeusz and Makosa, Andrzej and Krogulec, Iwona and Wrobel, Jerzy and Sadowski, Janusz}},
issn = {{0370-1972}},
keywords = {{domain walls; ferromagnetic semiconductors; GaMnAs; magnetoresistance; nanostructures}},
language = {{eng}},
number = {{7}},
pages = {{1587--1591}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Physica Status Solidi. B: Basic Research}},
title = {{Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires}},
url = {{http://dx.doi.org/10.1002/pssb.201001099}},
doi = {{10.1002/pssb.201001099}},
volume = {{248}},
year = {{2011}},
}