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Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors

Liu, Ruisheng LU ; Pettersson, H. ; Michalak, L. LU ; Canali, C. M. ; Suyatin, Dmitry LU orcid and Samuelson, Lars LU (2007) In Applied Physics Letters 90(12).
Abstract
The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
90
issue
12
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000245135800095
  • scopus:33947600114
ISSN
0003-6951
DOI
10.1063/1.2714289
language
English
LU publication?
yes
id
57b579d9-e821-4279-b2d3-e412b3e1ce25 (old id 669482)
date added to LUP
2016-04-01 12:01:29
date last changed
2022-01-26 21:45:05
@article{57b579d9-e821-4279-b2d3-e412b3e1ce25,
  abstract     = {{The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.}},
  author       = {{Liu, Ruisheng and Pettersson, H. and Michalak, L. and Canali, C. M. and Suyatin, Dmitry and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{12}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors}},
  url          = {{http://dx.doi.org/10.1063/1.2714289}},
  doi          = {{10.1063/1.2714289}},
  volume       = {{90}},
  year         = {{2007}},
}