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Direct observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111)

Andersen, Christopher R.Y. LU orcid ; Lehmann, Sebastian LU ; Tornberg, Marcus LU ; Maliakkal, Carina B. LU ; Jacobsson, Daniel LU orcid ; Mølhave, Kristian S. and Dick, Kimberly A. LU (2025) In Nanotechnology 36(13).
Abstract

Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and NW alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as metalorganic chemical vapor deposition (MOCVD) with in situ characterization using environmental transmission electron microscopy... (More)

Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and NW alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as metalorganic chemical vapor deposition (MOCVD) with in situ characterization using environmental transmission electron microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes. We report on successful epitaxial growth of Au-catalyzed GaAs NWs on Si(111) substrates using micro-electromechanical system chips with monocrystalline Si-cantilevers in both conventional MOCVD and ETEM-MOCVD systems. The conventional MOCVD provided a framework for initial parameter tuning, while ETEM-MOCVD offered valuable insights into early nucleation and catalyst-substrate interactions. Our findings show that nucleation is significantly influenced by the removal of native oxide layers and the initial formation of the Au-Si alloy. Our in situ studies revealed different NW-substrate interfaces, essential for optimizing the epitaxial growth process. We identified three typical configurations of NW ‘roots’, each impacted by growth conditions and preparation steps, affecting the structural and potentially the optical properties of the NWs. Similarly, doping from the Si-substrate may affect both optical and electrical properties; however, compositional analysis revealed no traces of Si in NWs post-nucleation and a small amount in the catalytic droplet. Our research highlights the importance of in situ studies for a comprehensive understanding of nucleation mechanisms, paving the way for optimizing III-V NW growth on Si substrates and developing high-performance III-V/Si devices.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ETEM, GaAs nanowires, MOCVD, nucleation mechanisms, Si
in
Nanotechnology
volume
36
issue
13
article number
135601
publisher
IOP Publishing
external identifiers
  • pmid:39854775
  • scopus:85218217403
ISSN
0957-4484
DOI
10.1088/1361-6528/adae17
language
English
LU publication?
yes
id
582432db-20d2-4495-a2eb-c0e47028e2ba
date added to LUP
2025-06-10 10:57:44
date last changed
2025-07-08 13:57:15
@article{582432db-20d2-4495-a2eb-c0e47028e2ba,
  abstract     = {{<p>Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and NW alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as metalorganic chemical vapor deposition (MOCVD) with in situ characterization using environmental transmission electron microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes. We report on successful epitaxial growth of Au-catalyzed GaAs NWs on Si(111) substrates using micro-electromechanical system chips with monocrystalline Si-cantilevers in both conventional MOCVD and ETEM-MOCVD systems. The conventional MOCVD provided a framework for initial parameter tuning, while ETEM-MOCVD offered valuable insights into early nucleation and catalyst-substrate interactions. Our findings show that nucleation is significantly influenced by the removal of native oxide layers and the initial formation of the Au-Si alloy. Our in situ studies revealed different NW-substrate interfaces, essential for optimizing the epitaxial growth process. We identified three typical configurations of NW ‘roots’, each impacted by growth conditions and preparation steps, affecting the structural and potentially the optical properties of the NWs. Similarly, doping from the Si-substrate may affect both optical and electrical properties; however, compositional analysis revealed no traces of Si in NWs post-nucleation and a small amount in the catalytic droplet. Our research highlights the importance of in situ studies for a comprehensive understanding of nucleation mechanisms, paving the way for optimizing III-V NW growth on Si substrates and developing high-performance III-V/Si devices.</p>}},
  author       = {{Andersen, Christopher R.Y. and Lehmann, Sebastian and Tornberg, Marcus and Maliakkal, Carina B. and Jacobsson, Daniel and Mølhave, Kristian S. and Dick, Kimberly A.}},
  issn         = {{0957-4484}},
  keywords     = {{ETEM; GaAs nanowires; MOCVD; nucleation mechanisms; Si}},
  language     = {{eng}},
  number       = {{13}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Direct observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111)}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/adae17}},
  doi          = {{10.1088/1361-6528/adae17}},
  volume       = {{36}},
  year         = {{2025}},
}