High-throughput spectroscopy of semiconductor nanowires in the presence of inhomogeneity
(2021) Low-Dimensional Materials and Devices 2021 p.20-20- Abstract
- Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter... (More)
- Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter across a growth, and apply Bayesian methods to study the underlying distributions in Zn-doped aerotaxy-grown GaAs nanowires. This new big-data enabled approach provides a route to exploit inherent inhomogeneity to reveal fundamental recombination mechanisms. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/58e17cfe-a53e-4952-81b7-53e925583755
- author
- Manchester, The Univ. ; Sivakumar, Sudhakar LU ; Magnusson, Martin LU and Parkinson, Patrick
- organization
- publishing date
- 2021-08-01
- type
- Contribution to conference
- publication status
- published
- subject
- pages
- 20 - 20
- conference name
- Low-Dimensional Materials and Devices 2021
- conference dates
- 2021-08-01 - 2021-08-05
- DOI
- 10.1117/12.2596583
- language
- English
- LU publication?
- yes
- id
- 58e17cfe-a53e-4952-81b7-53e925583755
- alternative location
- https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11800/2596583/High-throughput-spectroscopy-of-semiconductor-nanowires-in-the-presence-of/10.1117/12.2596583.full
- date added to LUP
- 2022-05-11 11:43:54
- date last changed
- 2022-05-12 09:40:23
@misc{58e17cfe-a53e-4952-81b7-53e925583755, abstract = {{Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter across a growth, and apply Bayesian methods to study the underlying distributions in Zn-doped aerotaxy-grown GaAs nanowires. This new big-data enabled approach provides a route to exploit inherent inhomogeneity to reveal fundamental recombination mechanisms.}}, author = {{Manchester, The Univ. and Sivakumar, Sudhakar and Magnusson, Martin and Parkinson, Patrick}}, language = {{eng}}, month = {{08}}, pages = {{20--20}}, title = {{High-throughput spectroscopy of semiconductor nanowires in the presence of inhomogeneity}}, url = {{http://dx.doi.org/10.1117/12.2596583}}, doi = {{10.1117/12.2596583}}, year = {{2021}}, }