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Resonant Tunneling Permeable Base Transistor for RF applications

Lind, Erik LU orcid ; Lindström, Peter LU and Wernersson, Lars-Erik LU (2003) 2003 International Semiconductor Device Research Symposium p.487-488
Abstract
A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
molecular beam epitaxy, double barrier heterostructure, room temperature, semiconductor heterostructure, metallic elements, resonant tunneling permeable base transistor, tungsten, W, AlGaAs-InGaAs, 30 nm, 293 to 298 K, electron beam lithography
host publication
2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
pages
487 - 488
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2003 International Semiconductor Device Research Symposium
conference location
Washington, DC, United States
conference dates
2003-12-10 - 2003-12-12
external identifiers
  • scopus:84945309213
ISBN
0-7803-8139-4
DOI
10.1109/ISDRS.2003.1272209
language
English
LU publication?
yes
id
58f62d8c-89fc-4a83-a7d3-c2104bdcc086 (old id 612108)
date added to LUP
2016-04-04 12:11:22
date last changed
2025-10-14 11:19:06
@inproceedings{58f62d8c-89fc-4a83-a7d3-c2104bdcc086,
  abstract     = {{A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature}},
  author       = {{Lind, Erik and Lindström, Peter and Wernersson, Lars-Erik}},
  booktitle    = {{2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)}},
  isbn         = {{0-7803-8139-4}},
  keywords     = {{molecular beam epitaxy; double barrier heterostructure; room temperature; semiconductor heterostructure; metallic elements; resonant tunneling permeable base transistor; tungsten; W; AlGaAs-InGaAs; 30 nm; 293 to 298 K; electron beam lithography}},
  language     = {{eng}},
  pages        = {{487--488}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Resonant Tunneling Permeable Base Transistor for RF applications}},
  url          = {{http://dx.doi.org/10.1109/ISDRS.2003.1272209}},
  doi          = {{10.1109/ISDRS.2003.1272209}},
  year         = {{2003}},
}