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Interfaces in Epitaxially Grown Zn3P2 Nanowires and Their Composition-Dependent Optoelectronic Properties for Photovoltaic Applications

Escobar Steinvall, Simon LU ; Salutari, Francesco LU ; Johansson, Jonas LU orcid ; Das, Ishika ; Lehmann, Sebastian LU ; Church, Stephen A. ; Spadaro, Maria Chiara ; Parkinson, Patrick ; Arbiol, Jordi and Dick, Kimberly A. LU (2025) In Chemistry of Materials 37(15). p.5805-5813
Abstract
Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce crystallographic defect formation at interfaces to help enable new material combinations for photovoltaics. One material that stands to benefit from the nanowire morphology is zinc phosphide (Zn3P2), which, despite promising optoelectronic properties, has experienced limited applicability due to challenges achieving heteroepitaxy, stemming from its incompatible lattice parameter and coefficient of thermal expansion. Herein, we identify the requirements for successful epitaxy of Zn3P2 nanowires using metalorganic chemical vapor deposition and the impact on interface... (More)
Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce crystallographic defect formation at interfaces to help enable new material combinations for photovoltaics. One material that stands to benefit from the nanowire morphology is zinc phosphide (Zn3P2), which, despite promising optoelectronic properties, has experienced limited applicability due to challenges achieving heteroepitaxy, stemming from its incompatible lattice parameter and coefficient of thermal expansion. Herein, we identify the requirements for successful epitaxy of Zn3P2 nanowires using metalorganic chemical vapor deposition and the impact on interface structure and defect formation. Furthermore, using high-throughput optical spectroscopy, we were able to demonstrate shifts in the photoluminescence intensity and energy by tuning the V/II ratio during growth, highlighting the compositional tunability of the optoelectronic properties of Zn3P2 nanowires. (Less)
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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Chemistry of Materials
volume
37
issue
15
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:40823387
ISSN
0897-4756
DOI
10.1021/acs.chemmater.5c00985
language
English
LU publication?
yes
id
5a703927-ad71-4203-8256-d6275a5d7660
date added to LUP
2026-01-12 14:57:39
date last changed
2026-01-13 10:18:29
@article{5a703927-ad71-4203-8256-d6275a5d7660,
  abstract     = {{Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce crystallographic defect formation at interfaces to help enable new material combinations for photovoltaics. One material that stands to benefit from the nanowire morphology is zinc phosphide (Zn3P2), which, despite promising optoelectronic properties, has experienced limited applicability due to challenges achieving heteroepitaxy, stemming from its incompatible lattice parameter and coefficient of thermal expansion. Herein, we identify the requirements for successful epitaxy of Zn3P2 nanowires using metalorganic chemical vapor deposition and the impact on interface structure and defect formation. Furthermore, using high-throughput optical spectroscopy, we were able to demonstrate shifts in the photoluminescence intensity and energy by tuning the V/II ratio during growth, highlighting the compositional tunability of the optoelectronic properties of Zn3P2 nanowires.}},
  author       = {{Escobar Steinvall, Simon and Salutari, Francesco and Johansson, Jonas and Das, Ishika and Lehmann, Sebastian and Church, Stephen A. and Spadaro, Maria Chiara and Parkinson, Patrick and Arbiol, Jordi and Dick, Kimberly A.}},
  issn         = {{0897-4756}},
  language     = {{eng}},
  month        = {{08}},
  number       = {{15}},
  pages        = {{5805--5813}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Chemistry of Materials}},
  title        = {{Interfaces in Epitaxially Grown Zn<sub>3</sub>P<sub>2</sub> Nanowires and Their Composition-Dependent Optoelectronic Properties for Photovoltaic Applications}},
  url          = {{http://dx.doi.org/10.1021/acs.chemmater.5c00985}},
  doi          = {{10.1021/acs.chemmater.5c00985}},
  volume       = {{37}},
  year         = {{2025}},
}