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Point Defect Induced Potential Wells across the m-Plane of Core/Shell GaN Nanowires

Rezaie, Saghar ; Kusch, Gunnar ; Samuelson, Lars LU ; Wagner, Jakob B. and Yazdi, Sadegh (2025) In Physica Status Solidi - Rapid Research Letters 19(9).
Abstract

Nanowires are promising structures for next-generation photonic devices due to their superior structural, optical, and electronic properties compared to thin films. In this study, unexpected electrostatic potential wells across the non-polar m-plane and at the core/shell interface in n-type GaN core/shell nanowires, grown via metal-organic vapor phase epitaxy, are reported. Using advanced electron microscopy, including off-axis electron holography, electrostatic potential distributions are mapped and shallow quantum wells are identified at the core/shell interface and core center. High-resolution transmission electron microscopy ruled out planar and line defects, implicating point defects as their source. Valence electron energy loss... (More)

Nanowires are promising structures for next-generation photonic devices due to their superior structural, optical, and electronic properties compared to thin films. In this study, unexpected electrostatic potential wells across the non-polar m-plane and at the core/shell interface in n-type GaN core/shell nanowires, grown via metal-organic vapor phase epitaxy, are reported. Using advanced electron microscopy, including off-axis electron holography, electrostatic potential distributions are mapped and shallow quantum wells are identified at the core/shell interface and core center. High-resolution transmission electron microscopy ruled out planar and line defects, implicating point defects as their source. Valence electron energy loss spectroscopy revealed localized bandgap narrowing due to strain from concentrated point defects. Hyperspectral cathodoluminescence linked lower potential in the core to CN defects, while the absence of related luminescence at the core/shell interface suggests VGaON defect complexes as plausible causes. These findings highlight the critical role of point defects in GaN nanowires, with significant implications for device performance.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
cathodoluminescence, core-shell, electron holography, GaN nanowire, point defects, transmission electron microscopy, valence electron energy loss spectroscopy
in
Physica Status Solidi - Rapid Research Letters
volume
19
issue
9
article number
2500145
publisher
Wiley-VCH Verlag
external identifiers
  • scopus:105012475801
ISSN
1862-6254
DOI
10.1002/pssr.202500145
language
English
LU publication?
yes
id
5e530d79-c54c-4b04-bc0c-07e8cf3c9ffd
date added to LUP
2026-01-20 16:13:56
date last changed
2026-01-20 16:15:15
@article{5e530d79-c54c-4b04-bc0c-07e8cf3c9ffd,
  abstract     = {{<p>Nanowires are promising structures for next-generation photonic devices due to their superior structural, optical, and electronic properties compared to thin films. In this study, unexpected electrostatic potential wells across the non-polar m-plane and at the core/shell interface in n-type GaN core/shell nanowires, grown via metal-organic vapor phase epitaxy, are reported. Using advanced electron microscopy, including off-axis electron holography, electrostatic potential distributions are mapped and shallow quantum wells are identified at the core/shell interface and core center. High-resolution transmission electron microscopy ruled out planar and line defects, implicating point defects as their source. Valence electron energy loss spectroscopy revealed localized bandgap narrowing due to strain from concentrated point defects. Hyperspectral cathodoluminescence linked lower potential in the core to C<sub>N</sub> defects, while the absence of related luminescence at the core/shell interface suggests V<sub>Ga</sub>O<sub>N</sub> defect complexes as plausible causes. These findings highlight the critical role of point defects in GaN nanowires, with significant implications for device performance.</p>}},
  author       = {{Rezaie, Saghar and Kusch, Gunnar and Samuelson, Lars and Wagner, Jakob B. and Yazdi, Sadegh}},
  issn         = {{1862-6254}},
  keywords     = {{cathodoluminescence; core-shell; electron holography; GaN nanowire; point defects; transmission electron microscopy; valence electron energy loss spectroscopy}},
  language     = {{eng}},
  number       = {{9}},
  publisher    = {{Wiley-VCH Verlag}},
  series       = {{Physica Status Solidi - Rapid Research Letters}},
  title        = {{Point Defect Induced Potential Wells across the m-Plane of Core/Shell GaN Nanowires}},
  url          = {{http://dx.doi.org/10.1002/pssr.202500145}},
  doi          = {{10.1002/pssr.202500145}},
  volume       = {{19}},
  year         = {{2025}},
}