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A Wideband Balun-LNA for Sub-6-GHz 5G NR with Multi-Mode Operation in 22-nm FD-SOI

Ghotbi, Iman LU orcid ; Behmanesh, Baktash LU orcid and Törmänen, Markus LU orcid (2022) 20th IEEE Interregional NEWCAS Conference, NEWCAS 2022 p.94-98
Abstract
A wideband balun-LNA featuring common gate (CG) – common source (CS) noise cancelling, current reuse, and g0.8 GHz to 7.3 GHz that fulfills the requirements of sub-6 GHzm -boosting is presented. It covers frequency range from 5G new radio (NR) technology. The LNA provides balanced output for identical differential loads and employs forward body biasing for linearity improvement. The LNA has low sensitivity to supply voltage variations due to its symmetrical complementary design and efficient biasing. The mode of operation can be adjusted between high-performance (HP) and high-tolerance (HT) modes by changing the ratio of the currents flowing through CG and CS branches. Post-layout simulations in 22 nm FDSOI technology yields a minimum... (More)
A wideband balun-LNA featuring common gate (CG) – common source (CS) noise cancelling, current reuse, and g0.8 GHz to 7.3 GHz that fulfills the requirements of sub-6 GHzm -boosting is presented. It covers frequency range from 5G new radio (NR) technology. The LNA provides balanced output for identical differential loads and employs forward body biasing for linearity improvement. The LNA has low sensitivity to supply voltage variations due to its symmetrical complementary design and efficient biasing. The mode of operation can be adjusted between high-performance (HP) and high-tolerance (HT) modes by changing the ratio of the currents flowing through CG and CS branches. Post-layout simulations in 22 nm FDSOI technology yields a minimum noise figure of 2 dB in HP mode while IIP3 reaches -2.1 dBm inHT mode. The power consumption varies between 0.7 mW to 1.8 mW in different modes and the supply voltage is 0.85 V. (Less)
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS)
pages
5 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
20th IEEE Interregional NEWCAS Conference, NEWCAS 2022
conference location
Quebec, Canada
conference dates
2022-06-19 - 2022-06-22
external identifiers
  • scopus:85138728511
ISBN
978-1-6654-0105-0
978-1-6654-0106-7
DOI
10.1109/NEWCAS52662.2022.9842214
language
English
LU publication?
yes
id
5eb28ff6-a8a8-4a38-bc24-4d2bba2a5d91
date added to LUP
2022-08-26 15:28:32
date last changed
2024-12-24 09:51:00
@inproceedings{5eb28ff6-a8a8-4a38-bc24-4d2bba2a5d91,
  abstract     = {{A wideband balun-LNA featuring common gate (CG) – common source (CS) noise cancelling, current reuse, and g0.8 GHz to 7.3 GHz that fulfills the requirements of sub-6 GHzm -boosting is presented. It covers frequency range from 5G new radio (NR) technology. The LNA provides balanced output for identical differential loads and employs forward body biasing for linearity improvement. The LNA has low sensitivity to supply voltage variations due to its symmetrical complementary design and efficient biasing. The mode of operation can be adjusted between high-performance (HP) and high-tolerance (HT) modes by changing the ratio of the currents flowing through CG and CS branches. Post-layout simulations in 22 nm FDSOI technology yields a minimum noise figure of 2 dB in HP mode while IIP3 reaches -2.1 dBm inHT mode. The power consumption varies between 0.7 mW to 1.8 mW in different modes and the supply voltage is 0.85 V.}},
  author       = {{Ghotbi, Iman and Behmanesh, Baktash and Törmänen, Markus}},
  booktitle    = {{2022 20th IEEE Interregional NEWCAS Conference (NEWCAS)}},
  isbn         = {{978-1-6654-0105-0}},
  language     = {{eng}},
  pages        = {{94--98}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{A Wideband Balun-LNA for Sub-6-GHz 5G NR with Multi-Mode Operation in 22-nm FD-SOI}},
  url          = {{http://dx.doi.org/10.1109/NEWCAS52662.2022.9842214}},
  doi          = {{10.1109/NEWCAS52662.2022.9842214}},
  year         = {{2022}},
}