Advanced

Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires

Wallentin, Jesper LU ; Borgström, Magnus LU ; Samuelson, Lars LU ; Ekawa, Mitsuru and Kawaguchi, Kenichi (2013) In Applied Physics Letters 102(3).
Abstract
In situ Zn doping of InP shells on nanowires in the wurtzite crystal structure has been investigated using diethyl zinc (DEZn) as a precursor. Photoluminescence measurements of single nanowires unexpectedly exhibit an acceptor-related peak at room temperature, in contrast to thin films grown at identical conditions. This peak is observable even using low DEZn molar fractions, which indicates efficient Zn incorporation at the InP wurtzite facets. The spectra indicate a 52 meV binding energy for the Zn acceptor in wurtzite, which is higher than that of bulk zinc blende. These results demonstrate that in situ Zn doping of wurtzite InP nanowire shells can be achieved. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788925]
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
102
issue
3
publisher
AIP Publishing LLC
external identifiers
  • wos:000314032600049
  • scopus:84872972558
ISSN
0003-6951
DOI
10.1063/1.4788925
language
English
LU publication?
yes
id
5fd959f4-05fb-497e-844d-7b55d1ca2cec (old id 3594962)
date added to LUP
2013-03-19 12:33:29
date last changed
2019-02-20 03:21:10
@article{5fd959f4-05fb-497e-844d-7b55d1ca2cec,
  abstract     = {In situ Zn doping of InP shells on nanowires in the wurtzite crystal structure has been investigated using diethyl zinc (DEZn) as a precursor. Photoluminescence measurements of single nanowires unexpectedly exhibit an acceptor-related peak at room temperature, in contrast to thin films grown at identical conditions. This peak is observable even using low DEZn molar fractions, which indicates efficient Zn incorporation at the InP wurtzite facets. The spectra indicate a 52 meV binding energy for the Zn acceptor in wurtzite, which is higher than that of bulk zinc blende. These results demonstrate that in situ Zn doping of wurtzite InP nanowire shells can be achieved. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788925]},
  articleno    = {032105},
  author       = {Wallentin, Jesper and Borgström, Magnus and Samuelson, Lars and Ekawa, Mitsuru and Kawaguchi, Kenichi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {3},
  publisher    = {AIP Publishing LLC},
  series       = {Applied Physics Letters},
  title        = {Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires},
  url          = {http://dx.doi.org/10.1063/1.4788925},
  volume       = {102},
  year         = {2013},
}