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New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Maximov, Ivan LU ; Beck, Marc LU ; Carlberg, Patrick LU ; Montelius, Lars LU ; Pfeiffer, K. ; Reuther, F. ; Gruetzer, G. ; Schulz, H. ; Wissen, M. and Scheer, H.-C. (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Abstract
We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented
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author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
nanoimprint lithography, high resolution negative resist mr-L 6000.1 XP, electron beam lithography, imprintable polymer, electron beam resolution, 50 nm, sensitivity, chemical composition, electron beam exposure
host publication
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
conference location
Malmö, Sweden
conference dates
2002-06-24 - 2002-06-28
language
English
LU publication?
yes
id
0f7d7776-e4ea-4a73-99bf-a8a08947abae (old id 611019)
date added to LUP
2016-04-04 11:36:13
date last changed
2018-11-21 21:05:57
@inproceedings{0f7d7776-e4ea-4a73-99bf-a8a08947abae,
  abstract     = {We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm&lt;sup&gt;2&lt;/sup&gt;. Studies of the resist properties as a function of chemical composition and development conditions are also presented},
  author       = {Maximov, Ivan and Beck, Marc and Carlberg, Patrick and Montelius, Lars and Pfeiffer, K. and Reuther, F. and Gruetzer, G. and Schulz, H. and Wissen, M. and Scheer, H.-C.},
  booktitle    = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  language     = {eng},
  publisher    = {Lund University},
  title        = {New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography},
  year         = {2002},
}