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A novel frequency-doubling device based on three-terminal ballistic junction

Shorubalko, Ivan LU ; Xu, Hongqi LU ; Maximov, Ivan LU ; Nilsson, D.; Omling, Pär LU ; Samuelson, Lars LU and Seifert, Werner LU (2002) Device Research Conference, 2002 In Device Research Conference (Cat. No.02TH8606) p.159-160
Abstract
Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show... (More)
Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
GaInAs-InP, frequency multiplication, room temperature, GaInAs/InP quantum well structures, high-electron-mobility QW structures, trench gate-channel insulation, one-dimensional lateral-FET, 1D lateral-field-effect transistor, T-shaped ballistic junction, nonlinear electrical properties, frequency-doubling device, three-terminal ballistic junction
in
Device Research Conference (Cat. No.02TH8606)
pages
159 - 160
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference, 2002
external identifiers
  • Scopus:84948691978
ISBN
0-7803-7317-0
DOI
10.1109/DRC.2002.1029574
language
English
LU publication?
yes
id
6610e2ba-db25-4650-9fb5-685844298bf9 (old id 611784)
date added to LUP
2007-11-29 09:12:58
date last changed
2017-01-01 08:02:41
@inproceedings{6610e2ba-db25-4650-9fb5-685844298bf9,
  abstract     = {Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature},
  author       = {Shorubalko, Ivan and Xu, Hongqi and Maximov, Ivan and Nilsson, D. and Omling, Pär and Samuelson, Lars and Seifert, Werner},
  booktitle    = {Device Research Conference (Cat. No.02TH8606)},
  isbn         = {0-7803-7317-0},
  keyword      = {GaInAs-InP,frequency multiplication,room temperature,GaInAs/InP quantum well structures,high-electron-mobility QW structures,trench gate-channel insulation,one-dimensional lateral-FET,1D lateral-field-effect transistor,T-shaped ballistic junction,nonlinear electrical properties,frequency-doubling device,three-terminal ballistic junction},
  language     = {eng},
  pages        = {159--160},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A novel frequency-doubling device based on three-terminal ballistic junction},
  url          = {http://dx.doi.org/10.1109/DRC.2002.1029574},
  year         = {2002},
}