A resonant galvanically separated power MOSFET/IGBT gate driver
(2004) 2004 IEEE 35th Annual Power Electronics Specialists Conference p.3243-3247- Abstract
- This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional... (More)
- This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/613918
- author
- Bergh, Tomas LU ; Karlsson, Per LU and Alaküla, Mats LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- galvanic separation, bipolar gate-source voltage, unipolar DC voltage, IGBT driver, resonant galvanically driver, power MOSFET gate driver, resonant circuit, signal transfer, DC-DC converter
- host publication
- 2004 IEEE 35th Annual Power Electronics Specialists Conference
- pages
- 3243 - 3247
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2004 IEEE 35th Annual Power Electronics Specialists Conference
- conference location
- Aachen, Germany
- conference dates
- 2004-06-20 - 2004-06-25
- external identifiers
-
- wos:000224587600533
- scopus:8744260698
- ISBN
- 0-7803-8399-0
- DOI
- 10.1109/PESC.2004.1355355
- language
- English
- LU publication?
- yes
- id
- dee30593-43cb-4bbf-82a6-40ca50fe84d7 (old id 613918)
- date added to LUP
- 2016-04-04 10:40:04
- date last changed
- 2022-05-01 20:18:03
@inproceedings{dee30593-43cb-4bbf-82a6-40ca50fe84d7, abstract = {{This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided}}, author = {{Bergh, Tomas and Karlsson, Per and Alaküla, Mats}}, booktitle = {{2004 IEEE 35th Annual Power Electronics Specialists Conference}}, isbn = {{0-7803-8399-0}}, keywords = {{galvanic separation; bipolar gate-source voltage; unipolar DC voltage; IGBT driver; resonant galvanically driver; power MOSFET gate driver; resonant circuit; signal transfer; DC-DC converter}}, language = {{eng}}, pages = {{3243--3247}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A resonant galvanically separated power MOSFET/IGBT gate driver}}, url = {{http://dx.doi.org/10.1109/PESC.2004.1355355}}, doi = {{10.1109/PESC.2004.1355355}}, year = {{2004}}, }