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Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

Mergenthaler, K. LU ; Anttu, N. LU ; Vainorius, N. LU ; Aghaeipour, M. LU ; Lehmann, S. LU ; Borgström, M. T. LU ; Samuelson, L. LU and Pistol, M. E. LU (2017) In Nature Communications 8(1).
Abstract

It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the... (More)

It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the radiative electron-hole recombination is highly momentum-conserving and that photogenerated minority carriers recombine before relaxing to the band edge at low temperatures. These observations challenge the use of models assuming thermalization of minority carriers in the analysis of highly doped devices.

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author
organization
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publication status
published
subject
in
Nature Communications
volume
8
issue
1
publisher
Nature Publishing Group
external identifiers
  • scopus:85034629563
  • wos:000416039000002
ISSN
2041-1723
DOI
10.1038/s41467-017-01817-5
language
English
LU publication?
yes
id
62bb6111-2698-4e1f-abe2-e23330c2facf
date added to LUP
2017-12-07 13:48:40
date last changed
2018-01-16 13:27:03
@article{62bb6111-2698-4e1f-abe2-e23330c2facf,
  abstract     = {<p>It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the radiative electron-hole recombination is highly momentum-conserving and that photogenerated minority carriers recombine before relaxing to the band edge at low temperatures. These observations challenge the use of models assuming thermalization of minority carriers in the analysis of highly doped devices.</p>},
  articleno    = {1634},
  author       = {Mergenthaler, K. and Anttu, N. and Vainorius, N. and Aghaeipour, M. and Lehmann, S. and Borgström, M. T. and Samuelson, L. and Pistol, M. E.},
  issn         = {2041-1723},
  language     = {eng},
  month        = {12},
  number       = {1},
  publisher    = {Nature Publishing Group},
  series       = {Nature Communications},
  title        = {Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors},
  url          = {http://dx.doi.org/10.1038/s41467-017-01817-5},
  volume       = {8},
  year         = {2017},
}