Magnetization of ultrathin (Ga,Mn)As layers
(2003) In Physical Review B (Condensed Matter and Materials Physics) 68(18: 184421).- Abstract
- Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are... (More)
- Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/293675
- author
- Mathieu, R ; Sorensen, BS ; Sadowski, Janusz LU ; Sodervall, U ; Kanski, J ; Svedlindh, P ; Lindelof, PE ; Hrabovsky, D and Vanelle, E
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 68
- issue
- 18: 184421
- publisher
- American Physical Society
- external identifiers
-
- wos:000187004300059
- scopus:0347064221
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.68.184421
- language
- English
- LU publication?
- yes
- id
- 63258dde-06cb-4b00-8179-8c7477fa2e19 (old id 293675)
- date added to LUP
- 2016-04-01 17:08:13
- date last changed
- 2022-01-29 00:39:09
@article{63258dde-06cb-4b00-8179-8c7477fa2e19, abstract = {{Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.}}, author = {{Mathieu, R and Sorensen, BS and Sadowski, Janusz and Sodervall, U and Kanski, J and Svedlindh, P and Lindelof, PE and Hrabovsky, D and Vanelle, E}}, issn = {{1098-0121}}, language = {{eng}}, number = {{18: 184421}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Magnetization of ultrathin (Ga,Mn)As layers}}, url = {{http://dx.doi.org/10.1103/PhysRevB.68.184421}}, doi = {{10.1103/PhysRevB.68.184421}}, volume = {{68}}, year = {{2003}}, }