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Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Francaviglia, Luca ; Giunto, Andrea ; Kim, Wonjong ; Romero-Gomez, Pablo ; Vukajlovic-Plestina, Jelena ; Friedl, Martin ; Potts, Heidi LU ; Güniat, Lucas ; Tütüncüoglu, Gözde and Fontcuberta I Morral, Anna (2018) In Nano Letters 18(4). p.2393-2401
Abstract

Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating... (More)

Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.

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author
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publishing date
type
Contribution to journal
publication status
published
in
Nano Letters
volume
18
issue
4
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85045218457
  • pmid:29578722
ISSN
1530-6992
DOI
10.1021/acs.nanolett.7b05402
language
English
LU publication?
no
id
640df55f-c4b8-47b3-85b2-ed6a0f0eb00c
date added to LUP
2019-05-15 09:51:43
date last changed
2021-04-20 03:54:20
@article{640df55f-c4b8-47b3-85b2-ed6a0f0eb00c,
  abstract     = {<p>Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.</p>},
  author       = {Francaviglia, Luca and Giunto, Andrea and Kim, Wonjong and Romero-Gomez, Pablo and Vukajlovic-Plestina, Jelena and Friedl, Martin and Potts, Heidi and Güniat, Lucas and Tütüncüoglu, Gözde and Fontcuberta I Morral, Anna},
  issn         = {1530-6992},
  language     = {eng},
  month        = {04},
  number       = {4},
  pages        = {2393--2401},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b05402},
  doi          = {10.1021/acs.nanolett.7b05402},
  volume       = {18},
  year         = {2018},
}