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Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Dalelkhan, B. LU ; Göransson, D. J.O. LU ; Thelander, C. LU ; Li, K. ; Xing, Y. J. ; Maisi, V. F. LU and Xu, H. Q. LU (2020) In Nanoscale 12(15). p.8159-8165
Abstract

We report on a transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the Fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by the resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1 μm-long device made from a nanowire of 50 nm in diameter, we extracted a bandgap energy of... (More)

We report on a transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the Fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by the resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1 μm-long device made from a nanowire of 50 nm in diameter, we extracted a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260 nm-long device is found to exhibit a finite off-state current and a circumference-normalized on-state hole current of 11 μA μm-1 at VD = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
12
issue
15
pages
7 pages
publisher
Royal Society of Chemistry
external identifiers
  • pmid:32239037
  • scopus:85083621454
ISSN
2040-3364
DOI
10.1039/d0nr00775g
language
English
LU publication?
yes
id
64528d37-7c3e-4cfb-8b55-ed8f11dc11ee
date added to LUP
2020-05-20 09:35:30
date last changed
2021-01-06 06:09:52
@article{64528d37-7c3e-4cfb-8b55-ed8f11dc11ee,
  abstract     = {<p>We report on a transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the Fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by the resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1 μm-long device made from a nanowire of 50 nm in diameter, we extracted a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260 nm-long device is found to exhibit a finite off-state current and a circumference-normalized on-state hole current of 11 μA μm<sup>-1</sup> at V<sub>D</sub> = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.</p>},
  author       = {Dalelkhan, B. and Göransson, D. J.O. and Thelander, C. and Li, K. and Xing, Y. J. and Maisi, V. F. and Xu, H. Q.},
  issn         = {2040-3364},
  language     = {eng},
  number       = {15},
  pages        = {8159--8165},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Ambipolar transport in narrow bandgap semiconductor InSb nanowires},
  url          = {http://dx.doi.org/10.1039/d0nr00775g},
  doi          = {10.1039/d0nr00775g},
  volume       = {12},
  year         = {2020},
}