Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques
(2007) In Nano Letters 7(9). p.2596-2601- Abstract
- Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/656452
- author
- Eymery, Joel ; Rieutord, Francois ; Favre-Nicolin, Vincent ; Robach, Odile ; Niquet, Yann-Michel ; Fröberg, Linus LU ; Mårtensson, Thomas LU and Samuelson, Lars LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 7
- issue
- 9
- pages
- 2596 - 2601
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000249501900010
- scopus:34948828176
- pmid:17722944
- ISSN
- 1530-6992
- DOI
- 10.1021/nl070888q
- language
- English
- LU publication?
- yes
- id
- 32a2ceac-905c-4540-9f5c-33d751777c00 (old id 656452)
- date added to LUP
- 2016-04-01 16:31:02
- date last changed
- 2022-01-28 20:17:41
@article{32a2ceac-905c-4540-9f5c-33d751777c00, abstract = {{Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.}}, author = {{Eymery, Joel and Rieutord, Francois and Favre-Nicolin, Vincent and Robach, Odile and Niquet, Yann-Michel and Fröberg, Linus and Mårtensson, Thomas and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{9}}, pages = {{2596--2601}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques}}, url = {{http://dx.doi.org/10.1021/nl070888q}}, doi = {{10.1021/nl070888q}}, volume = {{7}}, year = {{2007}}, }