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Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques

Eymery, Joel ; Rieutord, Francois ; Favre-Nicolin, Vincent ; Robach, Odile ; Niquet, Yann-Michel ; Fröberg, Linus LU ; Mårtensson, Thomas LU and Samuelson, Lars LU (2007) In Nano Letters 7(9). p.2596-2601
Abstract
Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
7
issue
9
pages
2596 - 2601
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000249501900010
  • scopus:34948828176
  • pmid:17722944
ISSN
1530-6992
DOI
10.1021/nl070888q
language
English
LU publication?
yes
id
32a2ceac-905c-4540-9f5c-33d751777c00 (old id 656452)
date added to LUP
2016-04-01 16:31:02
date last changed
2022-01-28 20:17:41
@article{32a2ceac-905c-4540-9f5c-33d751777c00,
  abstract     = {{Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.}},
  author       = {{Eymery, Joel and Rieutord, Francois and Favre-Nicolin, Vincent and Robach, Odile and Niquet, Yann-Michel and Fröberg, Linus and Mårtensson, Thomas and Samuelson, Lars}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{2596--2601}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques}},
  url          = {{http://dx.doi.org/10.1021/nl070888q}},
  doi          = {{10.1021/nl070888q}},
  volume       = {{7}},
  year         = {{2007}},
}