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GaAs : Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

Sadowski, Janusz LU ; Dluzewski, Piotr; Kret, Slawomir; Janik, Elzbieta; Lusakowska, Elzbieta; Kanski, Janusz; Presz, Adam; Terki, Ferial; Charar, Salam and Tang, Dong (2007) In Nano Letters 7(9). p.2724-2728
Abstract
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111) direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires... (More)
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111) direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
7
issue
9
pages
2724 - 2728
publisher
The American Chemical Society
external identifiers
  • wos:000249501900033
  • scopus:34948897628
ISSN
1530-6992
DOI
10.1021/nl071190f
language
English
LU publication?
yes
id
93e39366-487f-4885-84a6-deb4493a7fb3 (old id 656461)
date added to LUP
2007-12-21 14:43:42
date last changed
2017-11-19 04:12:26
@article{93e39366-487f-4885-84a6-deb4493a7fb3,
  abstract     = {GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111) direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics.},
  author       = {Sadowski, Janusz and Dluzewski, Piotr and Kret, Slawomir and Janik, Elzbieta and Lusakowska, Elzbieta and Kanski, Janusz and Presz, Adam and Terki, Ferial and Charar, Salam and Tang, Dong},
  issn         = {1530-6992},
  language     = {eng},
  number       = {9},
  pages        = {2724--2728},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {GaAs : Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions},
  url          = {http://dx.doi.org/10.1021/nl071190f},
  volume       = {7},
  year         = {2007},
}