Locating nanowire heterostructures by electron beam induced current
Gustafsson, Anders LU
; Björk, Mikael
LU
and Samuelson, Lars
LU
(2007)
In Nanotechnology
18(20).
- Abstract
- Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we... (More)
- Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we envisage the use of the technology on any type of nano-sized devices where the precise alignment of contacts to electrically active parts is necessary. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/663326
- author
- Gustafsson, Anders
LU
; Björk, Mikael
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 18
- issue
- 20
- article number
- 205306
- publisher
- IOP Publishing
- external identifiers
-
- wos:000246590100006
- scopus:34247501763
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/18/20/205306
- language
- English
- LU publication?
- yes
- id
- cda06d6f-4cd8-45a6-a5c9-bd6c6bea025c (old id 663326)
- date added to LUP
- 2016-04-01 12:34:10
- date last changed
- 2025-04-04 14:14:24
@article{cda06d6f-4cd8-45a6-a5c9-bd6c6bea025c,
abstract = {{Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we envisage the use of the technology on any type of nano-sized devices where the precise alignment of contacts to electrically active parts is necessary.}},
author = {{Gustafsson, Anders and Björk, Mikael and Samuelson, Lars}},
issn = {{0957-4484}},
language = {{eng}},
number = {{20}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Locating nanowire heterostructures by electron beam induced current}},
url = {{http://dx.doi.org/10.1088/0957-4484/18/20/205306}},
doi = {{10.1088/0957-4484/18/20/205306}},
volume = {{18}},
year = {{2007}},
}