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Locating nanowire heterostructures by electron beam induced current

Gustafsson, Anders LU ; Björk, Mikael LU and Samuelson, Lars LU (2007) In Nanotechnology 18(20).
Abstract
Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we... (More)
Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we envisage the use of the technology on any type of nano-sized devices where the precise alignment of contacts to electrically active parts is necessary. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
18
issue
20
publisher
IOP Publishing
external identifiers
  • wos:000246590100006
  • scopus:34247501763
ISSN
0957-4484
DOI
10.1088/0957-4484/18/20/205306
language
English
LU publication?
yes
id
cda06d6f-4cd8-45a6-a5c9-bd6c6bea025c (old id 663326)
date added to LUP
2007-12-07 14:03:28
date last changed
2017-01-01 05:15:37
@article{cda06d6f-4cd8-45a6-a5c9-bd6c6bea025c,
  abstract     = {Electron beam induced current ( EBIC) in a scanning electron microscope ( SEM) was used to identify the positions of heterostructures in InAs/InP nanowires. Composite SEM and EBIC images were used to locate heterostructures and quantum dots in the nanowires, and used in subsequent electron beam lithography to align local gate electrodes to these quantum dots. This has made it possible to use individual and local gates for single heterostructure-nanowires. The observed EBIC contrast is caused by charge separation of the electron-hole pairs generated by the electron beam close to the heterostructures, indicating the presence of band bending. In this article, we concentrate on devices based on nanowires containing heterostructures, but we envisage the use of the technology on any type of nano-sized devices where the precise alignment of contacts to electrically active parts is necessary.},
  articleno    = {205306},
  author       = {Gustafsson, Anders and Björk, Mikael and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {20},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Locating nanowire heterostructures by electron beam induced current},
  url          = {http://dx.doi.org/10.1088/0957-4484/18/20/205306},
  volume       = {18},
  year         = {2007},
}