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Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology

Bi, Zhaoxia LU (2007) In Journal of Crystal Growth 300(1). p.123-126
Abstract
Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show that the pre-deposited indium is able to promote the growth of InN, and meanwhile, suppress the indium aggregation in the grown layer. Atomic force microscopy (AFM) images indicate that the nucleation of InN becomes easier with the pre-deposition of indium. It is proposed that the pre-deposited indium can seed the growth of InN, just like the... (More)
Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show that the pre-deposited indium is able to promote the growth of InN, and meanwhile, suppress the indium aggregation in the grown layer. Atomic force microscopy (AFM) images indicate that the nucleation of InN becomes easier with the pre-deposition of indium. It is proposed that the pre-deposited indium can seed the growth of InN, just like the vapor-liquid-solid (VLS) fabrication of InN whiskers with indium nanoparticles. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InN, vapor-liquid-solid, MOCVD, indium pre-deposition
in
Journal of Crystal Growth
volume
300
issue
1
pages
123 - 126
publisher
Elsevier
external identifiers
  • wos:000245368700025
  • scopus:33847331533
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2006.11.003
language
English
LU publication?
yes
id
3c979083-ff46-4193-80d9-20bbf1802312 (old id 668455)
date added to LUP
2007-12-10 09:37:20
date last changed
2017-01-01 06:44:41
@article{3c979083-ff46-4193-80d9-20bbf1802312,
  abstract     = {Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show that the pre-deposited indium is able to promote the growth of InN, and meanwhile, suppress the indium aggregation in the grown layer. Atomic force microscopy (AFM) images indicate that the nucleation of InN becomes easier with the pre-deposition of indium. It is proposed that the pre-deposited indium can seed the growth of InN, just like the vapor-liquid-solid (VLS) fabrication of InN whiskers with indium nanoparticles. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Bi, Zhaoxia},
  issn         = {0022-0248},
  keyword      = {InN,vapor-liquid-solid,MOCVD,indium pre-deposition},
  language     = {eng},
  number       = {1},
  pages        = {123--126},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2006.11.003},
  volume       = {300},
  year         = {2007},
}