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Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy

Ouattara, Lassana LU ; Ulloa, J. M. ; Mikkelsen, Anders LU ; Lundgren, Edvin LU ; Koenraad, P. M. ; Borgström, Magnus LU orcid ; Samuelson, Lars LU and Seifert, Werner LU (2007) In Nanotechnology 18(14).
Abstract
We have studied the influence of the InP spacer layer thickness on stacked InAs/InP quantum dots, using cross-sectional scanning tunnelling microscopy. We show that for a spacer layer thickness of up to 30 nm, the quantum dots are spatially correlated but for a separating distance of 50 nm the vertical ordering of the dots is lost. These values are the same as previously found for quantum dots in the InAs/GaAs system despite the large difference in lattice mismatch between the InAs/GaAs ( 7%) and InAs/InP ( 3%) systems. We show that the apparent similarities can be understood by a combination of intermixing in the dots and differences in dot size. Finally, we demonstrate that the size of the quantum dots is affected by their vertical... (More)
We have studied the influence of the InP spacer layer thickness on stacked InAs/InP quantum dots, using cross-sectional scanning tunnelling microscopy. We show that for a spacer layer thickness of up to 30 nm, the quantum dots are spatially correlated but for a separating distance of 50 nm the vertical ordering of the dots is lost. These values are the same as previously found for quantum dots in the InAs/GaAs system despite the large difference in lattice mismatch between the InAs/GaAs ( 7%) and InAs/InP ( 3%) systems. We show that the apparent similarities can be understood by a combination of intermixing in the dots and differences in dot size. Finally, we demonstrate that the size of the quantum dots is affected by their vertical correlation. (Less)
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
18
issue
14
article number
145403
publisher
IOP Publishing
external identifiers
  • wos:000245267400003
  • scopus:33947162996
ISSN
0957-4484
DOI
10.1088/0957-4484/18/14/145403
language
English
LU publication?
yes
id
42466894-e4cb-477b-bcc1-7395aa801a8e (old id 669313)
date added to LUP
2016-04-01 11:47:18
date last changed
2024-10-08 09:56:54
@article{42466894-e4cb-477b-bcc1-7395aa801a8e,
  abstract     = {{We have studied the influence of the InP spacer layer thickness on stacked InAs/InP quantum dots, using cross-sectional scanning tunnelling microscopy. We show that for a spacer layer thickness of up to 30 nm, the quantum dots are spatially correlated but for a separating distance of 50 nm the vertical ordering of the dots is lost. These values are the same as previously found for quantum dots in the InAs/GaAs system despite the large difference in lattice mismatch between the InAs/GaAs ( 7%) and InAs/InP ( 3%) systems. We show that the apparent similarities can be understood by a combination of intermixing in the dots and differences in dot size. Finally, we demonstrate that the size of the quantum dots is affected by their vertical correlation.}},
  author       = {{Ouattara, Lassana and Ulloa, J. M. and Mikkelsen, Anders and Lundgren, Edvin and Koenraad, P. M. and Borgström, Magnus and Samuelson, Lars and Seifert, Werner}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{14}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/18/14/145403}},
  doi          = {{10.1088/0957-4484/18/14/145403}},
  volume       = {{18}},
  year         = {{2007}},
}