Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
(2007) In Applied Physics Letters 90(12).- Abstract
- The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/669482
- author
- Liu, Ruisheng
LU
; Pettersson, H.
; Michalak, L.
LU
; Canali, C. M.
; Suyatin, Dmitry
LU
and Samuelson, Lars LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 90
- issue
- 12
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000245135800095
- scopus:33947600114
- ISSN
- 0003-6951
- DOI
- 10.1063/1.2714289
- language
- English
- LU publication?
- yes
- id
- 57b579d9-e821-4279-b2d3-e412b3e1ce25 (old id 669482)
- date added to LUP
- 2016-04-01 12:01:29
- date last changed
- 2022-01-26 21:45:05
@article{57b579d9-e821-4279-b2d3-e412b3e1ce25, abstract = {{The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.}}, author = {{Liu, Ruisheng and Pettersson, H. and Michalak, L. and Canali, C. M. and Suyatin, Dmitry and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{12}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors}}, url = {{http://dx.doi.org/10.1063/1.2714289}}, doi = {{10.1063/1.2714289}}, volume = {{90}}, year = {{2007}}, }