Advanced

Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer

Wosinski, T.; Figielski, T.; Pelya, O.; Makosa, A.; Morawski, A.; Sadowski, Janusz LU ; Dobrowolski, W.; Szymczak, R. and Wrobel, J. (2007) In Physica Status Solidi. A, Applied Research 204(2). p.472-476
Abstract
Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as... (More)
Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physica Status Solidi. A, Applied Research
volume
204
issue
2
pages
472 - 476
publisher
John Wiley & Sons
external identifiers
  • wos:000244509300019
  • scopus:34547291822
ISSN
0031-8965
DOI
10.1002/pssa.200673230
language
English
LU publication?
yes
id
4ea6e704-bbc4-4444-a6f9-27cee316765d (old id 673558)
date added to LUP
2007-12-19 09:32:15
date last changed
2017-01-01 07:06:52
@article{4ea6e704-bbc4-4444-a6f9-27cee316765d,
  abstract     = {Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.},
  author       = {Wosinski, T. and Figielski, T. and Pelya, O. and Makosa, A. and Morawski, A. and Sadowski, Janusz and Dobrowolski, W. and Szymczak, R. and Wrobel, J.},
  issn         = {0031-8965},
  language     = {eng},
  number       = {2},
  pages        = {472--476},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. A, Applied Research},
  title        = {Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer},
  url          = {http://dx.doi.org/10.1002/pssa.200673230},
  volume       = {204},
  year         = {2007},
}