Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
(2007) In Physica Status Solidi. A, Applied Research 204(2). p.472-476- Abstract
- Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as... (More)
- Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/673558
- author
- Wosinski, T. ; Figielski, T. ; Pelya, O. ; Makosa, A. ; Morawski, A. ; Sadowski, Janusz LU ; Dobrowolski, W. ; Szymczak, R. and Wrobel, J.
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physica Status Solidi. A, Applied Research
- volume
- 204
- issue
- 2
- pages
- 472 - 476
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000244509300019
- scopus:34547291822
- ISSN
- 0031-8965
- DOI
- 10.1002/pssa.200673230
- language
- English
- LU publication?
- yes
- id
- 4ea6e704-bbc4-4444-a6f9-27cee316765d (old id 673558)
- date added to LUP
- 2016-04-01 16:29:46
- date last changed
- 2022-01-28 20:06:51
@article{4ea6e704-bbc4-4444-a6f9-27cee316765d,
abstract = {{Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.}},
author = {{Wosinski, T. and Figielski, T. and Pelya, O. and Makosa, A. and Morawski, A. and Sadowski, Janusz and Dobrowolski, W. and Szymczak, R. and Wrobel, J.}},
issn = {{0031-8965}},
language = {{eng}},
number = {{2}},
pages = {{472--476}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Physica Status Solidi. A, Applied Research}},
title = {{Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer}},
url = {{http://dx.doi.org/10.1002/pssa.200673230}},
doi = {{10.1002/pssa.200673230}},
volume = {{204}},
year = {{2007}},
}