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Assembling ferromagnetic single-electron transistors by atomic force microscopy

Liu, Ruisheng LU ; Suyatin, Dmitry LU ; Pettersson, H and Samuelson, Lars LU (2007) In Nanotechnology 18(5).
Abstract
We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in... (More)
We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
18
issue
5
publisher
IOP Publishing
external identifiers
  • wos:000243854900005
  • scopus:33947491239
ISSN
0957-4484
DOI
10.1088/0957-4484/18/5/055302
language
English
LU publication?
yes
id
053f165e-1c6e-4a99-874a-45f0e6047087 (old id 676019)
date added to LUP
2007-12-17 09:08:48
date last changed
2017-01-01 04:39:17
@article{053f165e-1c6e-4a99-874a-45f0e6047087,
  abstract     = {We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures.},
  articleno    = {055302},
  author       = {Liu, Ruisheng and Suyatin, Dmitry and Pettersson, H and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {5},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Assembling ferromagnetic single-electron transistors by atomic force microscopy},
  url          = {http://dx.doi.org/10.1088/0957-4484/18/5/055302},
  volume       = {18},
  year         = {2007},
}