Assembling ferromagnetic single-electron transistors by atomic force microscopy
Liu, Ruisheng LU ; Suyatin, Dmitry LU
; Pettersson, H
and Samuelson, Lars
LU
(2007)
In Nanotechnology
18(5).
- Abstract
- We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in... (More)
- We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/676019
- author
- Liu, Ruisheng
LU
; Suyatin, Dmitry
LU
; Pettersson, H
and Samuelson, Lars
LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 18
- issue
- 5
- article number
- 055302
- publisher
- IOP Publishing
- external identifiers
-
- wos:000243854900005
- scopus:33947491239
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/18/5/055302
- language
- English
- LU publication?
- yes
- id
- 053f165e-1c6e-4a99-874a-45f0e6047087 (old id 676019)
- date added to LUP
- 2016-04-01 11:54:24
- date last changed
- 2022-01-26 19:59:27
@article{053f165e-1c6e-4a99-874a-45f0e6047087,
abstract = {{We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures.}},
author = {{Liu, Ruisheng and Suyatin, Dmitry and Pettersson, H and Samuelson, Lars}},
issn = {{0957-4484}},
language = {{eng}},
number = {{5}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Assembling ferromagnetic single-electron transistors by atomic force microscopy}},
url = {{http://dx.doi.org/10.1088/0957-4484/18/5/055302}},
doi = {{10.1088/0957-4484/18/5/055302}},
volume = {{18}},
year = {{2007}},
}