Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 2016-September.- Abstract
We demonstrate for the first time a technology which allows the monolithic integration of both p-Type (InAs-Si) and n-Type (InAs-GaSb) heterojunction Tunnel FETs (TFET) laterally on a Si substrate. The lateral heterojunction nanowire (NW) structures are implemented using top-down CMOS-compatible processes combined with Template-Assisted Selective Epitaxy (TASE) [1] of the III-V materials. Sub-40nm InAs-Si p-TFETs and InAs-GaSb n-TFETs have been fabricated and represent to the best of our knowledge the first lateral III-V heterostructure NW TFETs. The InAs-Si p-TFETs show excellent performance with average subthreshold swing, SSave, of ∼70mV/dec. combined with an on-current, Ion, of 4μA/μm at VDS =... (More)
We demonstrate for the first time a technology which allows the monolithic integration of both p-Type (InAs-Si) and n-Type (InAs-GaSb) heterojunction Tunnel FETs (TFET) laterally on a Si substrate. The lateral heterojunction nanowire (NW) structures are implemented using top-down CMOS-compatible processes combined with Template-Assisted Selective Epitaxy (TASE) [1] of the III-V materials. Sub-40nm InAs-Si p-TFETs and InAs-GaSb n-TFETs have been fabricated and represent to the best of our knowledge the first lateral III-V heterostructure NW TFETs. The InAs-Si p-TFETs show excellent performance with average subthreshold swing, SSave, of ∼70mV/dec. combined with an on-current, Ion, of 4μA/μm at VDS = VGS =-0.5V. The InAs-GaSb n-TFETs have about an order of magnitude higher Ion, but SS is deteriorated due to high interface traps density (Dit).
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- author
- Cutaia, Davide ; Moselund, Kirsten E. ; Schmid, Heinz ; Borg, M. LU ; Olziersky, Antonis and Riel, Heike
- organization
- publishing date
- 2016-09-21
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
- volume
- 2016-September
- article number
- 7573444
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
- conference location
- Honolulu, United States
- conference dates
- 2016-06-13 - 2016-06-16
- external identifiers
-
- scopus:84991011686
- ISBN
- 9781509006373
- DOI
- 10.1109/VLSIT.2016.7573444
- language
- English
- LU publication?
- no
- id
- 68a9f15c-533c-4b51-a307-3404ef1a71a0
- date added to LUP
- 2017-03-02 13:55:32
- date last changed
- 2023-11-16 16:49:44
@inproceedings{68a9f15c-533c-4b51-a307-3404ef1a71a0, abstract = {{<p>We demonstrate for the first time a technology which allows the monolithic integration of both p-Type (InAs-Si) and n-Type (InAs-GaSb) heterojunction Tunnel FETs (TFET) laterally on a Si substrate. The lateral heterojunction nanowire (NW) structures are implemented using top-down CMOS-compatible processes combined with Template-Assisted Selective Epitaxy (TASE) [1] of the III-V materials. Sub-40nm InAs-Si p-TFETs and InAs-GaSb n-TFETs have been fabricated and represent to the best of our knowledge the first lateral III-V heterostructure NW TFETs. The InAs-Si p-TFETs show excellent performance with average subthreshold swing, SS<sub>ave</sub>, of ∼70mV/dec. combined with an on-current, I<sub>on</sub>, of 4μA/μm at V<sub>DS</sub> = V<sub>GS</sub> =-0.5V. The InAs-GaSb n-TFETs have about an order of magnitude higher I<sub>on</sub>, but SS is deteriorated due to high interface traps density (D<sub>it</sub>).</p>}}, author = {{Cutaia, Davide and Moselund, Kirsten E. and Schmid, Heinz and Borg, M. and Olziersky, Antonis and Riel, Heike}}, booktitle = {{2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016}}, isbn = {{9781509006373}}, language = {{eng}}, month = {{09}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Complementary III-V heterojunction lateral NW Tunnel FET technology on Si}}, url = {{http://dx.doi.org/10.1109/VLSIT.2016.7573444}}, doi = {{10.1109/VLSIT.2016.7573444}}, volume = {{2016-September}}, year = {{2016}}, }