An ultra low voltage, low power, fully integrated VCO for GPS in 90 nm RF-CMOS
(2006) In Analog Integrated Circuits and Signal Processing 46(1). p.57-63- Abstract
- A fully integrated 0.6 V VCO for the GPS L1 band is realized in a 90 nm RF-CMOS process. The purpose of the design is to demonstrate how suitable deep submicron CMOS transistors are for ultra low voltage, low power oscillator design. The VCO operates at 6.3 GHz and a divide-by-four circuit buffer provide the wanted 1575.42 MHz signal. Measured phase noise is for a 0.6 V supply voltage and bias current of 2.6 mA - 122 dBc/Hz at 1 MHz offset, measured for a 1.58 GHz carrier. The phase noise of the VCO has been measured for different bias point showing good agreement between measured results and theory.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/693897
- author
- Aspemyr, Lars LU and Linten, D
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- VCO, 90 nm, RF-CMOS, low voltage, GPS, low-power, frequency divider
- in
- Analog Integrated Circuits and Signal Processing
- volume
- 46
- issue
- 1
- pages
- 57 - 63
- publisher
- Springer
- external identifiers
-
- wos:000233567000007
- scopus:29144494141
- ISSN
- 0925-1030
- DOI
- 10.1007/s10470-005-4077-5
- language
- English
- LU publication?
- yes
- id
- afec884f-ec21-4d47-9b48-48ca4a0c47b3 (old id 693897)
- date added to LUP
- 2016-04-01 16:16:52
- date last changed
- 2022-03-07 04:49:58
@article{afec884f-ec21-4d47-9b48-48ca4a0c47b3, abstract = {{A fully integrated 0.6 V VCO for the GPS L1 band is realized in a 90 nm RF-CMOS process. The purpose of the design is to demonstrate how suitable deep submicron CMOS transistors are for ultra low voltage, low power oscillator design. The VCO operates at 6.3 GHz and a divide-by-four circuit buffer provide the wanted 1575.42 MHz signal. Measured phase noise is for a 0.6 V supply voltage and bias current of 2.6 mA - 122 dBc/Hz at 1 MHz offset, measured for a 1.58 GHz carrier. The phase noise of the VCO has been measured for different bias point showing good agreement between measured results and theory.}}, author = {{Aspemyr, Lars and Linten, D}}, issn = {{0925-1030}}, keywords = {{VCO; 90 nm; RF-CMOS; low voltage; GPS; low-power; frequency divider}}, language = {{eng}}, number = {{1}}, pages = {{57--63}}, publisher = {{Springer}}, series = {{Analog Integrated Circuits and Signal Processing}}, title = {{An ultra low voltage, low power, fully integrated VCO for GPS in 90 nm RF-CMOS}}, url = {{http://dx.doi.org/10.1007/s10470-005-4077-5}}, doi = {{10.1007/s10470-005-4077-5}}, volume = {{46}}, year = {{2006}}, }