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Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition

Harrington, S. D. ; Logan, J. A. ; Chatterjee, S. ; Patel, S. J. ; Rice, A. D. ; Feldman, M. M. ; Polley, C. M. LU ; Balasubramanian, T. LU ; Mikkelsen, A. LU and Palmstrøm, C. J. (2018) In Applied Physics Letters 113(9).
Abstract

Here, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co1-xNixTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved... (More)

Here, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co1-xNixTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. An electron pocket is observed below the Fermi level at the bulk X point for compositions x > 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
113
issue
9
article number
092103
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85052814568
ISSN
0003-6951
DOI
10.1063/1.5030553
language
English
LU publication?
yes
id
6a288fd9-74f1-4e8e-b47b-2c610feb07be
date added to LUP
2018-09-26 12:58:44
date last changed
2021-09-22 03:12:13
@article{6a288fd9-74f1-4e8e-b47b-2c610feb07be,
  abstract     = {<p>Here, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co<sub>1-x</sub>Ni<sub>x</sub>TiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x &gt; 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. An electron pocket is observed below the Fermi level at the bulk X point for compositions x &gt; 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.</p>},
  author       = {Harrington, S. D. and Logan, J. A. and Chatterjee, S. and Patel, S. J. and Rice, A. D. and Feldman, M. M. and Polley, C. M. and Balasubramanian, T. and Mikkelsen, A. and Palmstrøm, C. J.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {08},
  number       = {9},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Electronic structure of epitaxial half-Heusler Co<sub>1-x</sub>Ni<sub>x</sub>TiSb across the semiconductor to metal transition},
  url          = {http://dx.doi.org/10.1063/1.5030553},
  doi          = {10.1063/1.5030553},
  volume       = {113},
  year         = {2018},
}