Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide
Sandell, A ; Anderson, MP ; Alfredsson, Y ; Johansson, MKJ ; Schnadt, Joachim LU
; Rensmo, H
; Siegbahn, H
and Uvdal, Per
LU
(2002)
In Applied Physics Reviews
92(6).
p.3381-3387
- Abstract
- The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next... (More)
- The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/330043
- author
- Sandell, A
; Anderson, MP
; Alfredsson, Y
; Johansson, MKJ
; Schnadt, Joachim
LU
; Rensmo, H
; Siegbahn, H
and Uvdal, Per
LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 92
- issue
- 6
- pages
- 3381 - 3387
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000177683000066
- scopus:18644369602
- ISSN
- 1931-9401
- DOI
- 10.1063/1.1501751
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060), Solid State Physics (011013006), Synchrotron Radiation Research (011013009)
- id
- 6c147c78-9394-4be0-bb46-d5961e873ad1 (old id 330043)
- date added to LUP
- 2016-04-01 12:05:37
- date last changed
- 2022-04-05 17:33:25
@article{6c147c78-9394-4be0-bb46-d5961e873ad1,
abstract = {{The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide.}},
author = {{Sandell, A and Anderson, MP and Alfredsson, Y and Johansson, MKJ and Schnadt, Joachim and Rensmo, H and Siegbahn, H and Uvdal, Per}},
issn = {{1931-9401}},
language = {{eng}},
number = {{6}},
pages = {{3381--3387}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Reviews}},
title = {{Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide}},
url = {{http://dx.doi.org/10.1063/1.1501751}},
doi = {{10.1063/1.1501751}},
volume = {{92}},
year = {{2002}},
}