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Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy

Tuomisto, F ; Slotte, J ; Saarinen, K and Sadowski, Janusz LU (2003) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 103(6). p.601-606
Abstract
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
volume
103
issue
6
pages
601 - 606
publisher
Polska Akademia Nauk
external identifiers
  • wos:000184649200014
  • scopus:0042655382
ISSN
0587-4246
language
English
LU publication?
yes
id
70a54f34-c67b-4248-8b18-21e7680e3b6a (old id 304766)
alternative location
http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-601.html
date added to LUP
2016-04-01 16:57:37
date last changed
2025-10-14 10:58:57
@article{70a54f34-c67b-4248-8b18-21e7680e3b6a,
  abstract     = {{Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.}},
  author       = {{Tuomisto, F and Slotte, J and Saarinen, K and Sadowski, Janusz}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{601--606}},
  publisher    = {{Polska Akademia Nauk}},
  series       = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}},
  title        = {{Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy}},
  url          = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-601.html}},
  volume       = {{103}},
  year         = {{2003}},
}