Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
(2010) 13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XIII) 39(6). p.794-798- Abstract
- Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover,... (More)
- Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1617781
- author
- Yastrubchak, O. ; Domagala, J. Z. ; Sadowski, Janusz LU ; Kulik, M. ; Zuk, J. ; Toth, A. L. ; Szymczak, R. and Wosinski, T.
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Raman spectroscopy, high-resolution x-ray diffraction, ion implantation, Ferromagnetic semiconductor, Mn)As, (Ga, SQUID, magnetometry
- host publication
- Journal Of Electronic Materials
- volume
- 39
- issue
- 6
- pages
- 794 - 798
- publisher
- Springer
- conference name
- 13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XIII)
- conference dates
- 2009-09-13 - 2009-09-17
- external identifiers
-
- wos:000277712000035
- scopus:77954622233
- ISSN
- 1543-186X
- 0361-5235
- DOI
- 10.1007/s11664-010-1123-6
- language
- English
- LU publication?
- yes
- id
- 710d62b3-c08e-4488-9ad0-9a5055fe30a8 (old id 1617781)
- date added to LUP
- 2016-04-01 11:11:45
- date last changed
- 2024-01-07 10:11:01
@inproceedings{710d62b3-c08e-4488-9ad0-9a5055fe30a8,
abstract = {{Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.}},
author = {{Yastrubchak, O. and Domagala, J. Z. and Sadowski, Janusz and Kulik, M. and Zuk, J. and Toth, A. L. and Szymczak, R. and Wosinski, T.}},
booktitle = {{Journal Of Electronic Materials}},
issn = {{1543-186X}},
keywords = {{Raman spectroscopy; high-resolution x-ray diffraction; ion implantation; Ferromagnetic semiconductor; Mn)As; (Ga; SQUID; magnetometry}},
language = {{eng}},
number = {{6}},
pages = {{794--798}},
publisher = {{Springer}},
title = {{Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers}},
url = {{http://dx.doi.org/10.1007/s11664-010-1123-6}},
doi = {{10.1007/s11664-010-1123-6}},
volume = {{39}},
year = {{2010}},
}