Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates
(2015) In Nano Letters 15(2). p.981-989- Abstract
We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.
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https://lup.lub.lu.se/record/721c33ac-380e-4633-b171-83e4df435dca
- author
- Bussone, Genziana ; Schäfer-Eberwein, Heiko ; Dimakis, Emmanouil ; Biermanns, Andreas ; Carbone, Dina LU ; Tahraoui, Abbes ; Geelhaar, Lutz ; Haring Bolívar, Peter ; Schülli, Tobias U. and Pietsch, Ullrich
- publishing date
- 2015-02-11
- type
- Contribution to journal
- publication status
- published
- keywords
- axial interfaces, correlation, electrical characterization, plastic deformation, single GaAs nanowires, X-ray nanodiffraction
- in
- Nano Letters
- volume
- 15
- issue
- 2
- pages
- 9 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:84922771393
- ISSN
- 1530-6984
- DOI
- 10.1021/nl5037879
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2015 American Chemical Society.
- id
- 721c33ac-380e-4633-b171-83e4df435dca
- date added to LUP
- 2021-12-15 11:45:12
- date last changed
- 2022-02-09 18:56:24
@article{721c33ac-380e-4633-b171-83e4df435dca, abstract = {{<p>We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.</p>}}, author = {{Bussone, Genziana and Schäfer-Eberwein, Heiko and Dimakis, Emmanouil and Biermanns, Andreas and Carbone, Dina and Tahraoui, Abbes and Geelhaar, Lutz and Haring Bolívar, Peter and Schülli, Tobias U. and Pietsch, Ullrich}}, issn = {{1530-6984}}, keywords = {{axial interfaces; correlation; electrical characterization; plastic deformation; single GaAs nanowires; X-ray nanodiffraction}}, language = {{eng}}, month = {{02}}, number = {{2}}, pages = {{981--989}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates}}, url = {{http://dx.doi.org/10.1021/nl5037879}}, doi = {{10.1021/nl5037879}}, volume = {{15}}, year = {{2015}}, }