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Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates

Bussone, Genziana ; Schäfer-Eberwein, Heiko ; Dimakis, Emmanouil ; Biermanns, Andreas ; Carbone, Dina LU ; Tahraoui, Abbes ; Geelhaar, Lutz ; Haring Bolívar, Peter ; Schülli, Tobias U. and Pietsch, Ullrich (2015) In Nano Letters 15(2). p.981-989
Abstract

We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.

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author
; ; ; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
keywords
axial interfaces, correlation, electrical characterization, plastic deformation, single GaAs nanowires, X-ray nanodiffraction
in
Nano Letters
volume
15
issue
2
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:84922771393
ISSN
1530-6984
DOI
10.1021/nl5037879
language
English
LU publication?
no
additional info
Publisher Copyright: © 2015 American Chemical Society.
id
721c33ac-380e-4633-b171-83e4df435dca
date added to LUP
2021-12-15 11:45:12
date last changed
2022-02-09 18:56:24
@article{721c33ac-380e-4633-b171-83e4df435dca,
  abstract     = {{<p>We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.</p>}},
  author       = {{Bussone, Genziana and Schäfer-Eberwein, Heiko and Dimakis, Emmanouil and Biermanns, Andreas and Carbone, Dina and Tahraoui, Abbes and Geelhaar, Lutz and Haring Bolívar, Peter and Schülli, Tobias U. and Pietsch, Ullrich}},
  issn         = {{1530-6984}},
  keywords     = {{axial interfaces; correlation; electrical characterization; plastic deformation; single GaAs nanowires; X-ray nanodiffraction}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{2}},
  pages        = {{981--989}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates}},
  url          = {{http://dx.doi.org/10.1021/nl5037879}},
  doi          = {{10.1021/nl5037879}},
  volume       = {{15}},
  year         = {{2015}},
}