Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
(2013) In Journal of Crystal Growth 370. p.128-132- Abstract
In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent... (More)
In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.
(Less)
- author
- Guillamet, R. ; Lagay, N. ; Mocuta, C. ; Lagrée, P. Y. ; Carbone, G. LU and Décobert, J.
- publishing date
- 2013-05-01
- type
- Contribution to journal
- publication status
- published
- keywords
- A1. Computer simulation, A1. High resolution x-ray diffraction, A2. Selective epitaxy, B2. Semiconducting III-V materials
- in
- Journal of Crystal Growth
- volume
- 370
- pages
- 5 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:84901636275
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2012.09.053
- language
- English
- LU publication?
- no
- id
- 72a6b3ed-07f4-4e9f-a67d-dcb5c84c7b85
- date added to LUP
- 2021-12-15 12:00:48
- date last changed
- 2023-02-28 15:44:56
@article{72a6b3ed-07f4-4e9f-a67d-dcb5c84c7b85,
abstract = {{<p>In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.</p>}},
author = {{Guillamet, R. and Lagay, N. and Mocuta, C. and Lagrée, P. Y. and Carbone, G. and Décobert, J.}},
issn = {{0022-0248}},
keywords = {{A1. Computer simulation; A1. High resolution x-ray diffraction; A2. Selective epitaxy; B2. Semiconducting III-V materials}},
language = {{eng}},
month = {{05}},
pages = {{128--132}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2012.09.053}},
doi = {{10.1016/j.jcrysgro.2012.09.053}},
volume = {{370}},
year = {{2013}},
}