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Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As) : Magnetic and Magneto-Transport Investigations

Levchenko, K. ; Andrearczyk, T. ; Domagala, J. Z. ; Sadowski, J. LU ; Kowalczyk, L. ; Szot, M. ; Kuna, R. ; Figielski, T. and Wosinski, T. (2017) In Journal of Superconductivity and Novel Magnetism 30(3). p.825-829
Abstract

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers. A significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers, revealed in the planar Hall effect (PHE)... (More)

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers. A significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers, revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. A two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in non-volatile memory devices.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Magnetic semiconductors, Magneto-optical Kerr effect, Magneto-resistance, Planar Hall effect, Raman spectroscopy, Thin films
in
Journal of Superconductivity and Novel Magnetism
volume
30
issue
3
pages
825 - 829
publisher
Springer
external identifiers
  • wos:000395062600038
  • scopus:84987597556
ISSN
1557-1939
DOI
10.1007/s10948-016-3752-3
language
English
LU publication?
yes
id
72d7aacd-7951-4c5a-9dcf-f723666713a1
date added to LUP
2016-11-04 10:47:33
date last changed
2025-01-12 14:26:38
@article{72d7aacd-7951-4c5a-9dcf-f723666713a1,
  abstract     = {{<p>Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers. A significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers, revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. A two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in non-volatile memory devices.</p>}},
  author       = {{Levchenko, K. and Andrearczyk, T. and Domagala, J. Z. and Sadowski, J. and Kowalczyk, L. and Szot, M. and Kuna, R. and Figielski, T. and Wosinski, T.}},
  issn         = {{1557-1939}},
  keywords     = {{Magnetic semiconductors; Magneto-optical Kerr effect; Magneto-resistance; Planar Hall effect; Raman spectroscopy; Thin films}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{825--829}},
  publisher    = {{Springer}},
  series       = {{Journal of Superconductivity and Novel Magnetism}},
  title        = {{Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As) : Magnetic and Magneto-Transport Investigations}},
  url          = {{http://dx.doi.org/10.1007/s10948-016-3752-3}},
  doi          = {{10.1007/s10948-016-3752-3}},
  volume       = {{30}},
  year         = {{2017}},
}