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1/f-noise in Vertical InAs Nanowire Transistors

Persson, Karl-Magnus LU ; Berg, Martin LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2013) 25th International Conference on Indium Phosphide and Related Materials (IPRM) p.1-2
Abstract
The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
1/f-noise, high-kappa, nanowire, InAs, FET
host publication
2013 International Conference on Indium Phosphide and Related Materials (IPRM)
pages
1 - 2
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
25th International Conference on Indium Phosphide and Related Materials (IPRM)
conference location
Kobe, Japan
conference dates
2013-05-19 - 2013-05-23
external identifiers
  • wos:000326658100074
  • scopus:84882300246
ISSN
1092-8669
DOI
10.1109/ICIPRM.2013.6562634
language
English
LU publication?
yes
id
72e1cbe8-7c99-46ff-9811-2947a992a41e (old id 4204157)
date added to LUP
2016-04-01 14:45:37
date last changed
2023-09-03 18:59:52
@inproceedings{72e1cbe8-7c99-46ff-9811-2947a992a41e,
  abstract     = {{The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.}},
  author       = {{Persson, Karl-Magnus and Berg, Martin and Lind, Erik and Wernersson, Lars-Erik}},
  booktitle    = {{2013 International Conference on Indium Phosphide and Related Materials (IPRM)}},
  issn         = {{1092-8669}},
  keywords     = {{1/f-noise; high-kappa; nanowire; InAs; FET}},
  language     = {{eng}},
  pages        = {{1--2}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{1/f-noise in Vertical InAs Nanowire Transistors}},
  url          = {{https://lup.lub.lu.se/search/files/4146716/4317867.pdf}},
  doi          = {{10.1109/ICIPRM.2013.6562634}},
  year         = {{2013}},
}