1/f-noise in Vertical InAs Nanowire Transistors
(2013) 25th International Conference on Indium Phosphide and Related Materials (IPRM) p.1-2- Abstract
- The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4204157
- author
- Persson, Karl-Magnus LU ; Berg, Martin LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- 1/f-noise, high-kappa, nanowire, InAs, FET
- host publication
- 2013 International Conference on Indium Phosphide and Related Materials (IPRM)
- pages
- 1 - 2
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 25th International Conference on Indium Phosphide and Related Materials (IPRM)
- conference location
- Kobe, Japan
- conference dates
- 2013-05-19 - 2013-05-23
- external identifiers
-
- wos:000326658100074
- scopus:84882300246
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2013.6562634
- language
- English
- LU publication?
- yes
- id
- 72e1cbe8-7c99-46ff-9811-2947a992a41e (old id 4204157)
- date added to LUP
- 2016-04-01 14:45:37
- date last changed
- 2023-09-03 18:59:52
@inproceedings{72e1cbe8-7c99-46ff-9811-2947a992a41e, abstract = {{The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.}}, author = {{Persson, Karl-Magnus and Berg, Martin and Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{2013 International Conference on Indium Phosphide and Related Materials (IPRM)}}, issn = {{1092-8669}}, keywords = {{1/f-noise; high-kappa; nanowire; InAs; FET}}, language = {{eng}}, pages = {{1--2}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{1/f-noise in Vertical InAs Nanowire Transistors}}, url = {{https://lup.lub.lu.se/search/files/4146716/4317867.pdf}}, doi = {{10.1109/ICIPRM.2013.6562634}}, year = {{2013}}, }