A luminescence study of doping effects in InP-based radial nanowire structures
(2013) 18th International Conference on Microscopy of Semiconducting Materials 471.- Abstract
- We have used micro-photo-and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4273217
- author
- Lindgren, David LU ; Heurlin, Magnus LU ; Kawaguchi, K. ; Borgström, Magnus LU ; Pistol, Mats-Erik LU ; Monemar, Bo LU ; Samuelson, Lars LU and Gustafsson, Anders LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)
- volume
- 471
- publisher
- IOP Publishing
- conference name
- 18th International Conference on Microscopy of Semiconducting Materials
- conference dates
- 2013-04-07 - 2013-04-11
- external identifiers
-
- wos:000327967600040
- scopus:84890745510
- ISSN
- 1742-6588
- 1742-6596
- DOI
- 10.1088/1742-6596/471/1/012040
- language
- English
- LU publication?
- yes
- id
- 733274db-c324-45df-bfb1-4a15860bca62 (old id 4273217)
- date added to LUP
- 2016-04-01 10:27:12
- date last changed
- 2024-08-11 22:27:14
@inproceedings{733274db-c324-45df-bfb1-4a15860bca62, abstract = {{We have used micro-photo-and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.}}, author = {{Lindgren, David and Heurlin, Magnus and Kawaguchi, K. and Borgström, Magnus and Pistol, Mats-Erik and Monemar, Bo and Samuelson, Lars and Gustafsson, Anders}}, booktitle = {{18th Microscopy of Semiconducting Materials Conference (MSM XVIII)}}, issn = {{1742-6588}}, language = {{eng}}, publisher = {{IOP Publishing}}, title = {{A luminescence study of doping effects in InP-based radial nanowire structures}}, url = {{http://dx.doi.org/10.1088/1742-6596/471/1/012040}}, doi = {{10.1088/1742-6596/471/1/012040}}, volume = {{471}}, year = {{2013}}, }