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Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface : A molecular dynamics study

Chirita, V ; Hultman, L and Wallenberg, LR LU (1997) In Thin Solid Films 294(1-2). p.47-49
Abstract
Molecular dynamics (MD) and high-resolution electron microscopy (HREM) imaging are used to investigate the mechanism of strain relaxation of a model 3C-SiC(001)/Si(001) interface. It is found that the essential atomic mechanism governing this process is the formation of undulations in planes parallel and perpendicular to the interface. The net effect is the generation of misfit-accommodating dislocations, of the [removed] type, which allow for structure relaxation at 2, 700 and 1000 K. MD configurations are then used for HREM image simulations. Comparisons with actual HREM images of the interface support the model interface and relaxation mechanisms proposed herein.
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
strain relaxation, interfaces, thermal stability, molecular dynamics
in
Thin Solid Films
volume
294
issue
1-2
pages
3 pages
publisher
Elsevier
external identifiers
  • scopus:0031069221
ISSN
0040-6090
DOI
10.1016/S0040-6090(96)09257-7
language
English
LU publication?
yes
id
735526af-6dca-4b45-b07b-9d4361468648
date added to LUP
2023-10-31 15:58:58
date last changed
2023-11-02 15:47:36
@article{735526af-6dca-4b45-b07b-9d4361468648,
  abstract     = {{Molecular dynamics (MD) and high-resolution electron microscopy (HREM) imaging are used to investigate the mechanism of strain relaxation of a model 3C-SiC(001)/Si(001) interface. It is found that the essential atomic mechanism governing this process is the formation of undulations in planes parallel and perpendicular to the interface. The net effect is the generation of misfit-accommodating dislocations, of the [removed] type, which allow for structure relaxation at 2, 700 and 1000 K. MD configurations are then used for HREM image simulations. Comparisons with actual HREM images of the interface support the model interface and relaxation mechanisms proposed herein.}},
  author       = {{Chirita, V and Hultman, L and Wallenberg, LR}},
  issn         = {{0040-6090}},
  keywords     = {{strain relaxation; interfaces; thermal stability; molecular dynamics}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{1-2}},
  pages        = {{47--49}},
  publisher    = {{Elsevier}},
  series       = {{Thin Solid Films}},
  title        = {{Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface : A molecular dynamics study}},
  url          = {{http://dx.doi.org/10.1016/S0040-6090(96)09257-7}},
  doi          = {{10.1016/S0040-6090(96)09257-7}},
  volume       = {{294}},
  year         = {{1997}},
}