Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface : A molecular dynamics study
(1997) In Thin Solid Films 294(1-2). p.47-49- Abstract
- Molecular dynamics (MD) and high-resolution electron microscopy (HREM) imaging are used to investigate the mechanism of strain relaxation of a model 3C-SiC(001)/Si(001) interface. It is found that the essential atomic mechanism governing this process is the formation of undulations in planes parallel and perpendicular to the interface. The net effect is the generation of misfit-accommodating dislocations, of the [removed] type, which allow for structure relaxation at 2, 700 and 1000 K. MD configurations are then used for HREM image simulations. Comparisons with actual HREM images of the interface support the model interface and relaxation mechanisms proposed herein.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/735526af-6dca-4b45-b07b-9d4361468648
- author
- Chirita, V ; Hultman, L and Wallenberg, LR LU
- organization
- publishing date
- 1997-02-15
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- strain relaxation, interfaces, thermal stability, molecular dynamics
- in
- Thin Solid Films
- volume
- 294
- issue
- 1-2
- pages
- 3 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:0031069221
- ISSN
- 0040-6090
- DOI
- 10.1016/S0040-6090(96)09257-7
- language
- English
- LU publication?
- yes
- id
- 735526af-6dca-4b45-b07b-9d4361468648
- date added to LUP
- 2023-10-31 15:58:58
- date last changed
- 2023-11-02 15:47:36
@article{735526af-6dca-4b45-b07b-9d4361468648, abstract = {{Molecular dynamics (MD) and high-resolution electron microscopy (HREM) imaging are used to investigate the mechanism of strain relaxation of a model 3C-SiC(001)/Si(001) interface. It is found that the essential atomic mechanism governing this process is the formation of undulations in planes parallel and perpendicular to the interface. The net effect is the generation of misfit-accommodating dislocations, of the [removed] type, which allow for structure relaxation at 2, 700 and 1000 K. MD configurations are then used for HREM image simulations. Comparisons with actual HREM images of the interface support the model interface and relaxation mechanisms proposed herein.}}, author = {{Chirita, V and Hultman, L and Wallenberg, LR}}, issn = {{0040-6090}}, keywords = {{strain relaxation; interfaces; thermal stability; molecular dynamics}}, language = {{eng}}, month = {{02}}, number = {{1-2}}, pages = {{47--49}}, publisher = {{Elsevier}}, series = {{Thin Solid Films}}, title = {{Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface : A molecular dynamics study}}, url = {{http://dx.doi.org/10.1016/S0040-6090(96)09257-7}}, doi = {{10.1016/S0040-6090(96)09257-7}}, volume = {{294}}, year = {{1997}}, }