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Effects of aluminum on epitaxial graphene grown on C-face SiC

Xia, Chao ; Johansson, Leif I. ; Niu, Yuran LU ; Hultman, Lars and Virojanadara, Chariya (2015) In Applied Physics Reviews 117(19).
Abstract
The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C,... (More)
The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s). (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
117
issue
19
article number
195306
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000355005600036
  • scopus:84929631173
ISSN
1931-9401
DOI
10.1063/1.4921462
language
English
LU publication?
yes
id
7425d279-a361-4936-ace9-17a4fe987a13 (old id 7411674)
date added to LUP
2016-04-01 10:15:15
date last changed
2022-01-25 21:22:34
@article{7425d279-a361-4936-ace9-17a4fe987a13,
  abstract     = {{The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s).}},
  author       = {{Xia, Chao and Johansson, Leif I. and Niu, Yuran and Hultman, Lars and Virojanadara, Chariya}},
  issn         = {{1931-9401}},
  language     = {{eng}},
  number       = {{19}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Reviews}},
  title        = {{Effects of aluminum on epitaxial graphene grown on C-face SiC}},
  url          = {{http://dx.doi.org/10.1063/1.4921462}},
  doi          = {{10.1063/1.4921462}},
  volume       = {{117}},
  year         = {{2015}},
}