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Effects of aluminum on epitaxial graphene grown on C-face SiC

Xia, Chao; Johansson, Leif I.; Niu, Yuran LU ; Hultman, Lars and Virojanadara, Chariya (2015) In Applied Physics Reviews 117(19).
Abstract
The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C,... (More)
The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s). (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
117
issue
19
publisher
American Institute of Physics
external identifiers
  • wos:000355005600036
  • scopus:84929631173
ISSN
0021-8979
DOI
10.1063/1.4921462
language
English
LU publication?
yes
id
7425d279-a361-4936-ace9-17a4fe987a13 (old id 7411674)
date added to LUP
2015-06-26 14:52:51
date last changed
2017-01-01 03:25:00
@article{7425d279-a361-4936-ace9-17a4fe987a13,
  abstract     = {The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s).},
  articleno    = {195306},
  author       = {Xia, Chao and Johansson, Leif I. and Niu, Yuran and Hultman, Lars and Virojanadara, Chariya},
  issn         = {0021-8979},
  language     = {eng},
  number       = {19},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Effects of aluminum on epitaxial graphene grown on C-face SiC},
  url          = {http://dx.doi.org/10.1063/1.4921462},
  volume       = {117},
  year         = {2015},
}